scholarly journals A simulation study on memory characteristics of InGaZnO-channel ferroelectric-FETs with 2D planar and 3D structure

2021 ◽  
Author(s):  
FEI MO ◽  
Xiaoran Mei ◽  
Takuya Saraya ◽  
Toshiro HIRAMOTO ◽  
Masaharu Kobayashi
Keyword(s):  
Electric Field ◽  
3D Structure ◽  
Voltage Divider ◽  
Channel Length ◽  
High Density ◽  
Floating Body ◽  
Outer Diameter ◽  
Electrostatic Coupling ◽  
Memory Applications ◽  
Memory Characteristics

Abstract We have investigated memory characteristics of InGaZnO (IGZO)-channel ferroelectric-FETs (FeFETs) with 2D planar and 3D structure by TCAD simulation to improve the memory window (MW) with a floating-body channel for high-density memory applications. From the study on 2D-planar FeFETs with single-gate (SG) and double-gate (DG), the MW depends on channel length (L) and enhanced with shorter L due to the stronger electrostatic coupling from the source and drain to the center region of the IGZO layer. From the study on 3D-structure FeFETs with macaroni (MAC) and nanowire (NW) structure, the large MW can be obtained especially in NW FeFETs due to the electric-field concentration by Gauss’s law in the 3D electrostatics. Furthermore, we have systematically studied and discussed the device design of MAC and NW structure FeFETs in terms of the diameter and thickness for high-density memory applications. As IGZO thickness decreases and outer diameter of the IGZO layer decreases, the MW increases due to the voltage divider and the electric-field concentration. The device parameters that can maximize the MW can be determined under the constraints of the layout and material based on this study.

SOT and STT-Based 4-Bit MRAM Cell for High-Density Memory Applications

2021 ◽  
pp. 1-7
Author(s):  
Arshid Nisar ◽  
Seema Dhull ◽  
Sparsh Mittal ◽  
Brajesh Kumar Kaushik
Keyword(s):  
High Density ◽  
Memory Applications

U-Net Deep-Learning-Based 3D Cell Counter for the Quality Control of 3D Cell-Based Assays through Seed Cell Measurement

2021 ◽  
pp. 247263032110175
Author(s):  
Eun Ji Jeong ◽  
Donghyuk Choi ◽  
Dong Woo Lee
Keyword(s):  
Quality Control ◽  
Deep Learning ◽  
3D Structure ◽  
High Density ◽  
Cell Counting ◽  
Cell Numbers ◽  
Counting Error ◽  
Seed Cell ◽  
Initial Seed ◽  
Number Of Cells

Conventional cell-counting software uses contour or watershed segmentations and focuses on identifying two-dimensional (2D) cells attached on the bottom of plastic plates. Recently developed software has been useful tools for the quality control of 2D cell-based assays by measuring initial seed cell numbers. These algorithms do not, however, quantitatively test in three-dimensional (3D) cell-based assays using extracellular matrix (ECM), because cells are aggregated and overlapped in the 3D structure of the ECM such as Matrigel, collagen, and alginate. Such overlapped and aggregated cells make it difficult to segment cells and to count the number of cells accurately. It is important, however, to determine the number of cells to standardize experiments and ensure the reproducibility of 3D cell-based assays. In this study, we apply a 3D cell-counting method using U-net deep learning to high-density aggregated cells in ECM to identify initial seed cell numbers. The proposed method showed a 10% counting error in high-density aggregated cells, while the contour and watershed segmentations showed 30% and 40% counting errors, respectively. Thus, the proposed method can reduce the seed cell-counting error in 3D cell-based assays by providing the exact number of cells to researchers, thereby enabling the acquisition of quality control in 3D cell-based assays.

Polymeric Thin Films for Electro-Optic Modulator and High Density Optical Memory Applications

1995 ◽  
Vol 392 ◽  
Author(s):  
Larry R. Dalton ◽  
Aaron W. Harper ◽  
Zhiyong Liang ◽  
Jingsong Zhu ◽  
Uzi Efron ◽  
...  
Keyword(s):  
Conformational Changes ◽  
Optical Waveguides ◽  
Optical Memory ◽  
High Density ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Polymeric Thin Films ◽  
Buried Channel ◽  
Electro Optic ◽  
Memory Applications

AbstractChromophores capable of undergoing conformational changes when exposed to ultraviolet or visible light have been synthesized with functional groups permitting attachment to polymer matrices. One class of such chromophores, containing reactive functionalities at both ends of the chromophore, are referred to as double-end crosslinkable (DEC) chromophores. These chromophores are used in the synthesis of hardened nonlinear optically active lattices and in the fabrication of buried channel nonlinear optical waveguides by photoprocessing; development of such waveguides represents a critical step in the production of polymeric electro-optic modulators. Such chromophores are also crucial to the phenomena of laser-assisted poling (also known as photochemically-induced poling). Finally, these chromophores are attached to the surface of polystyrene beads permitting the realization of room temperature spectral hole burning exploiting morphology-dependent resonances. Such resonances provide the basis of wavelength coding for the development of high density optical memories.

scholarly journals A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

2010 ◽  
Vol 31 (9) ◽  
pp. 1047-1049 ◽  
Author(s):  
Mei Xue ◽  
Sanaz Kabehie ◽  
Adam Z. Stieg ◽  
Ekaterina Tkatchouk ◽  
Diego Benitez ◽  
...  
Keyword(s):  
High Density ◽  
Molecular Rotor ◽  
Memory Applications

scholarly journals RF-Carpets that Compress Ions to High Density Beams

2015 ◽  
Vol 21 (S4) ◽  
pp. 84-89
Author(s):  
H. Wollnik ◽  
F. Arai ◽  
Y. Ito ◽  
P. Schury ◽  
M. Wada
Keyword(s):  
Phase Space ◽  
Electric Field ◽  
Electric Fields ◽  
Ion Beams ◽  
High Density ◽  
Ion Density ◽  
Field Lines

AbstractIons that are moved by electric fields in gases follow quite exactly the electric field lines since these ions have substantially lost their kinetic energies in collisions with gas atoms or molecules and so carry no momenta. Shaping the electric fields appropriately the phase space such ion beams occupy can be reduced and correspondingly the ion density of beams be increased.

scholarly journals Impact of Foreshock Transients on the Flank Magnetopause and Magnetosphere and the Ionosphere

2021 ◽  
Vol 8 ◽  
Author(s):  
Chih-Ping Wang ◽  
Xueyi Wang ◽  
Terry Z. Liu ◽  
Yu Lin
Keyword(s):  
Magnetic Field ◽  
3D Structure ◽  
Hybrid Simulation ◽  
High Density ◽  
Low Density ◽  
Simulation Results ◽  
Ground Magnetic ◽  
Pressure Perturbations

Mesoscale (on the scales of a few minutes and a few RE) magnetosheath and magnetopause perturbations driven by foreshock transients have been observed in the flank magnetotail. In this paper, we present the 3D global hybrid simulation results to show qualitatively the 3D structure of the flank magnetopause distortion caused by foreshock transients and its impacts on the tail magnetosphere and the ionosphere. Foreshock transient perturbations consist of a low-density core and high-density edge(s), thus, after they propagate into the magnetosheath, they result in magnetosheath pressure perturbations that distort magnetopause. The magnetopause is distorted locally outward (inward) in response to the dip (peak) of the magnetosheath pressure perturbations. As the magnetosheath perturbations propagate tailward, they continue to distort the flank magnetopause. This qualitative explains the transient appearance of the magnetosphere observed in the flank magnetosheath associated with foreshock transients. The 3D structure of the magnetosheath perturbations and the shape of the distorted magnetopause keep evolving as they propagate tailward. The transient distortion of the magnetopause generates compressional magnetic field perturbations within the magnetosphere. The magnetopause distortion also alters currents around the magnetopause, generating field-aligned currents (FACs) flowing in and out of the ionosphere. As the magnetopause distortion propagates tailward, it results in localized enhancements of FACs in the ionosphere that propagate anti-sunward. This qualitatively explains the observed anti-sunward propagation of the ground magnetic field perturbations associated with foreshock transients.

scholarly journals Light trapping in high-density ultracold atomic gases for quantum memory applications

2010 ◽  
Vol 57 (19) ◽  
pp. 1833-1840 ◽  
Author(s):  
I.M. Sokolov ◽  
D.V. Kupriyanov ◽  
R.G. Olave ◽  
M.D. Havey
Keyword(s):  
Light Trapping ◽  
High Density ◽  
Quantum Memory ◽  
Atomic Gases ◽  
Ultracold Atomic Gases ◽  
Memory Applications
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