The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application
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Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).
2010 ◽
Vol 4
(3)
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pp. 379-383
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2007 ◽
Vol 50
(6)
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pp. 1827
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2008 ◽
Vol 354
(2-9)
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pp. 404-408
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2009 ◽
Vol 91
(3-4)
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pp. 628-633
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2005 ◽
Vol 285
(1-2)
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pp. 208-214
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