Atomic layer deposition of titanium dioxide thin films from tetraethoxytitanium and water

Plasma enhanced atomic layer deposition (PEALD) of titanium dioxide thin films was conducted using Tetrakis dimethylamino titanium (TDMATi) and an oxygen plasma on a polyethersulfon (PES) substrate at a deposition temperature of 90 °C. The effects of the induced plasma power on passivation properties were investigated according to film thickness. The growth rate of the titanium dioxide film was 0.8 Å/cycle, and the water vapor transmission rate (WTVR) for a 80 nm titanium dioxide film was 0.023 g/m2·day. The passivation performance of the titanium dioxide film was investigated using an organic light-emitting diode (OLED). The coated OLED lifetime was 90 h, 15 times longer than that of an uncoated sample.

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The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application

Optica Applicata ◽

10.37190/oa200412 ◽

2020 ◽

Vol 50 (4) ◽

Author(s):

Marek Szindler ◽

Magdalena M. Szindler

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Energy Dispersive Spectrometer ◽

Atomic Layer ◽

Antireflection Coating ◽

Optical Parameters ◽

Tio2 Thin Films ◽

Layer Deposition ◽

Vis Spectroscopy ◽

Titanium Dioxide Thin Films

Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin ﬁlms. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).

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Atomic layer deposition of thin films of titanium dioxide from titanium tetramethoxide and water

Russian Journal of Applied Chemistry ◽

10.1134/s1070427213030063 ◽

2013 ◽

Vol 86 (3) ◽

pp. 326-331 ◽

Cited By ~ 2

Author(s):

A. P. Alekhin ◽

A. M. Markeev ◽

D. V. Ovchinnikov ◽

A. A. Soloviev ◽

V. F. Toknova

Keyword(s):

Thin Films ◽

Titanium Dioxide ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

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Structure and optical properties of TiO2 thin films deposited by ALD method

Open Physics ◽

10.1515/phys-2017-0137 ◽

2017 ◽

Vol 15 (1) ◽

pp. 1067-1071 ◽

Cited By ~ 5

Author(s):

Marek Szindler ◽

Magdalena M. Szindler ◽

Paulina Boryło ◽

Tymoteusz Jung

Keyword(s):

Thin Films ◽

Titanium Dioxide ◽

Energy Dispersive Spectrometer ◽

Atomic Layer ◽

Tio2 Thin Films ◽

X Ray Crystallography ◽

Systems Software ◽

Layer Deposition ◽

Atomic Layer Deposition Method ◽

Titanium Dioxide Thin Films

AbstractThis paper presents the results of study on titanium dioxide thin films prepared by atomic layer deposition method on a silicon substrate. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM) and scanning electron microscope (SEM). Obtained roughness parameters have been calculated with XEI Park Systems software. Qualitative studies of chemical composition were also performed using the energy dispersive spectrometer (EDS). The structure of titanium dioxide was investigated by X-ray crystallography. A variety of crystalline TiO2was also confirmed by using the Raman spectrometer. The optical reflection spectra have been measured with UV-Vis spectrophotometry.

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