RECRYSTALLIZATION NUCLEATION MECHANISM OF FGH4096 POWDER METALLURGY SUPERALLOY

2012 ◽  
Vol 48 (8) ◽  
pp. 1005 ◽  
Author(s):  
Yongquan NING ◽  
Zekun YAO
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.


1944 ◽  
Vol 23 (2) ◽  
pp. 35
Author(s):  
W.D. Jones
Keyword(s):  

2003 ◽  
Vol 112 ◽  
pp. 615-618 ◽  
Author(s):  
P. P. Rodriguez ◽  
J. San Jean ◽  
A. Iza-Mendia ◽  
V. Recarte ◽  
J. J. Pérez-Landazabal ◽  
...  

Author(s):  
J. Alias

Much research on magnesium (Mg) emphasises creating good corrosion resistance of magnesium, due to its high reactivity in most environments. In this study, powder metallurgy (PM) technique is used to produce Mg samples with a variation of aluminium (Al) composition. The effect of aluminium composition on the microstructure development, including the phase analysis was characterised by optical microscope (OM), scanning electron microscopy (SEM) and x-ray diffraction (XRD). The mechanical property of Mg sample was performed through Vickers microhardness. The results showed that the addition of aluminium in the synthesised Mg sample formed distribution of Al-rich phases of Mg17Al12, with 50 wt.% of aluminium content in the Mg sample exhibited larger fraction and distribution of Al-rich phases as compared to the 20 wt.% and 10 wt.% of aluminium content. The microhardness values were also increased at 20 wt.% and 50 wt.% of aluminium content, comparable to the standard microhardness value of the annealed Mg. A similar trend in corrosion resistance of the Mg immersed in 3.5 wt.% NaCl solution was observed. The corrosion behaviour was evaluated based on potentiodynamic polarisation behaviour. The corrosion current density, icorr, is observed to decrease with the increase of Al composition in the Mg sample, corresponding to the increase in corrosion resistance due to the formation of aluminium oxide layer on the Al-rich surface that acted as the corrosion barrier. Overall, the inclusion of aluminium in this study demonstrates the promising development of high corrosion resistant Mg alloys.


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