scholarly journals Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

Elektron ◽  
2021 ◽  
Vol 5 (2) ◽  
pp. 100-104
Author(s):  
Lucas Sambuco Salomone ◽  
Mariano Garcia-Inza ◽  
Sebastián Carbonetto ◽  
Adrián Faigón

Mediante un modelo numérico desarrollado recientemente y basado en principios físicos, se estudia la respuesta a la radiación de celdas de compuerta flotante programadas/borradas. El rol que juega la captura de carga en los óxidos en el desplazamiento total de la tensión umbral con la dosis es debidamente evaluado a través de la variación de la tasa de captura de los huecos generados por radiación. Se considera un modelo analítico simplificado y se discuten sus limitaciones.

2019 ◽  
Vol 6 (3) ◽  
pp. 807-843
Author(s):  
Giorgio Cellere ◽  
Andrea Cester ◽  
Alessandro Paccagnella

2014 ◽  
Author(s):  
T. Prod'homme ◽  
J.-M. Belloir ◽  
H. Weber ◽  
G. Bazalgette Courrèges-Lacoste ◽  
R. Meynart ◽  
...  

2021 ◽  
Author(s):  
Side Song ◽  
Guozhu Liu ◽  
Qi He ◽  
Xiang Gu ◽  
Genshen Hong ◽  
...  

Abstract In this paper, the combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, the results indicate that: 1.The programmed flash cells with a prior appropriate number of program and erase cycling stress exhibit much smaller threshold voltage shift than their counterpart in response to radiation, which is mainly ascribed to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate; 2.The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in both of the programmed state and erased state; 3. Radiation is more likely to induce interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.


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