Photo-Ionization Effects in High Gain Gallium Arsenide Photoconductive Semiconductor Switches

2009 ◽  
Vol 29 (2) ◽  
pp. 496-499 ◽  
Author(s):  
刘鸿 Liu Hong ◽  
阮成礼 Ruan Chengli
Keyword(s):  
Gallium Arsenide ◽  
High Gain ◽  
Semiconductor Switches ◽  
Photo Ionization

scholarly journals Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Gain ◽  
Photoconductive Switch ◽  
Semiconductor Switches ◽  
Avalanche Gain ◽  
Semiconductor Switch ◽  
The Stability ◽  
Electrical Characterizations ◽  
State Resistance

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

Carrier Injection in High Gain GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 602-605
Author(s):  
Li Zheng ◽  
Hong Liu
Keyword(s):  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Filaments ◽  
The Impact ◽  
Photo Ionization

The carrier injection in high gain semi-insulating GaAs photoconductive semiconductor switches (PCSS) is studied. A great quantity of carrier generation in the insulating region of the GaAs PCSS depends upon photo-ionization and impact ionization. The impact ionization avalanche carrier generation exists in the electron avalanche domains (EAD). The EAD is closely related to the growing domains associated with carrier injection. Carriers are injected either at the contacts (Cathode and Anode) or at the tip of the current filaments which works as a “contact reaching further into the gap”. Carrier injection plays an important role for the EAD formation.

Note: All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches

2016 ◽  
Vol 87 (8) ◽  
pp. 086107 ◽  
Author(s):  
Long Hu ◽  
Jiancang Su ◽  
Zhenjie Ding ◽  
Qingsong Hao ◽  
Yajun Fan ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Solid State ◽  
Pulse Generator ◽  
Semiconductor Switches

Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

2015 ◽  
Vol 106 (2) ◽  
pp. 022108 ◽  
Author(s):  
Wei Wang ◽  
Liansheng Xia ◽  
Yi Chen ◽  
Yi Liu ◽  
Chao Yang ◽  
...  
Keyword(s):  
Pulse Laser ◽  
High Power ◽  
Laser Diodes ◽  
High Gain ◽  
Semiconductor Switches ◽  
Power Pulse ◽  
High Power Pulse

scholarly journals Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches

2000 ◽  
Vol 28 (5) ◽  
pp. 1507-1511 ◽  
Author(s):  
A. Mar ◽  
G.M. Loubriel ◽  
F.J. Zutavern ◽  
M.W. O'Malley ◽  
W.D. Helgeson ◽  
...  
Keyword(s):  
High Gain ◽  
Semiconductor Switches

Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches

2002 ◽  
Vol 19 (8) ◽  
pp. 1119-1121 ◽  
Author(s):  
Shi Wei ◽  
Chen Er-Zhu ◽  
Zhang Xian-Bin ◽  
Li Qi
Keyword(s):  
Gallium Arsenide ◽  
High Gain ◽  
Photoconductive Switches

High power, longevity gallium arsenide photoconductive semiconductor switches

2010 ◽  
Vol 55 (13) ◽  
pp. 1331-1337 ◽  
Author(s):  
HongChun Yang ◽  
HaiJuan Cui ◽  
YunQing Sun ◽  
Gang Zeng ◽  
MingHe Wu
Keyword(s):  
Gallium Arsenide ◽  
High Power ◽  
Semiconductor Switches

Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

1997 ◽  
Vol 25 (2) ◽  
pp. 327-334 ◽  
Author(s):  
J.S.H. Schoenberg ◽  
J.W. Burger ◽  
J.S. Tyo ◽  
M.D. Abdalla ◽  
M.C. Skipper ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Ultra Wideband ◽  
Semiconductor Switches
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