Research on superimposed of 2 parallel high gain photoconductive semiconductor switches triggered by laser

2018 ◽  
Author(s):  
Cheng Ma ◽  
shaoqiang wang ◽  
Wei Shi
Keyword(s):  
High Gain ◽  
Semiconductor Switches

Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

2015 ◽  
Vol 106 (2) ◽  
pp. 022108 ◽  
Author(s):  
Wei Wang ◽  
Liansheng Xia ◽  
Yi Chen ◽  
Yi Liu ◽  
Chao Yang ◽  
...  
Keyword(s):  
Pulse Laser ◽  
High Power ◽  
Laser Diodes ◽  
High Gain ◽  
Semiconductor Switches ◽  
Power Pulse ◽  
High Power Pulse

scholarly journals Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches

2000 ◽  
Vol 28 (5) ◽  
pp. 1507-1511 ◽  
Author(s):  
A. Mar ◽  
G.M. Loubriel ◽  
F.J. Zutavern ◽  
M.W. O'Malley ◽  
W.D. Helgeson ◽  
...  
Keyword(s):  
High Gain ◽  
Semiconductor Switches

scholarly journals High-gain GaAs photoconductive semiconductor switches: measurement of filament velocity and reduced trigger energy

1995 ◽  
Author(s):  
Guillermo M. Loubriel ◽  
Fred J. Zutavern ◽  
Marty W. O'Malley ◽  
Wesley D. Helgeson
Keyword(s):  
High Gain ◽  
Semiconductor Switches

Spontaneous Radiation Energy of Current Filaments in GaAs Photoconductive Semiconductor Switches

2013 ◽  
Vol 423-426 ◽  
pp. 2659-2662
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Hong Jun Yang ◽  
Wei Yang ◽  
Yong Lin Zheng
Keyword(s):  
Radiative Recombination ◽  
Physical Method ◽  
Radiation Energy ◽  
High Gain ◽  
Recombination Coefficient ◽  
Radiation Wavelength ◽  
Spontaneous Radiation ◽  
Semiconductor Switches ◽  
Optical Output ◽  
Current Filaments

The spontaneous radiation energy of the current filaments in high gain GaAs photoconductive semiconductor switches (PCSS) is quantificationally analyzed. The spontaneous radiation formula of the current filaments was derived. The concept of the distribution function of the radiation intensity dependent on radiation wavelength was first introduced in GaAs samples. The radiative recombination coefficients of four peak wavelengths were estimated by the statistical-physical method in high gain GaAs PCSS. Calculated according to the radiative recombination coefficient of 890 nm radiation, the spontaneous radiation energies are consistent with the experimental observations. This explains the observations about optical output energy versus filament current.

Electron Avalanche Domains in High Gain Semi-Insulating GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 619-622
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiao Ling Zhu ◽  
Song Hui Dai ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Voltage ◽  
High Carrier

The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from theN-shaped current-voltage (I-V) characteristics toS-shapedI-Vcharacteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments.

scholarly journals Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Gain ◽  
Photoconductive Switch ◽  
Semiconductor Switches ◽  
Avalanche Gain ◽  
Semiconductor Switch ◽  
The Stability ◽  
Electrical Characterizations ◽  
State Resistance

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

Carrier Injection in High Gain GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 602-605
Author(s):  
Li Zheng ◽  
Hong Liu
Keyword(s):  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Filaments ◽  
The Impact ◽  
Photo Ionization

The carrier injection in high gain semi-insulating GaAs photoconductive semiconductor switches (PCSS) is studied. A great quantity of carrier generation in the insulating region of the GaAs PCSS depends upon photo-ionization and impact ionization. The impact ionization avalanche carrier generation exists in the electron avalanche domains (EAD). The EAD is closely related to the growing domains associated with carrier injection. Carriers are injected either at the contacts (Cathode and Anode) or at the tip of the current filaments which works as a “contact reaching further into the gap”. Carrier injection plays an important role for the EAD formation.

Analysis of Characteristic Quantities in High Gain GaAs Photoconductive Semiconductor Switches

2010 ◽  
Vol 37 (2) ◽  
pp. 394-397
Author(s):  
刘鸿 Liu Hong ◽  
阮成礼 Ruan Chengli
Keyword(s):  
High Gain ◽  
Semiconductor Switches
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