Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

A Complete Two-Dimensional Avalanche Photodiode Based on MoTe2−WS2−MoTe2 Heterojunctions With Ultralow Dark Current

Two-dimensional (2D)-material-based photodetectors have recently received great attention due to their potentials in developing ultrathin and highly compact devices. Avalanche photodiodes (APDs) are widely used in a variety of fields such as optical communications and bioimaging due to their fast responses and high sensitivities. However, conventional APDs based on bulk materials are limited by their relatively high dark current. One solution to tackle this issue is by employing nanomaterials and nanostructures as the active layers for APDs. In this study, we proposed and fabricated an atomically-thick APD based on heterojunctions formed by 2D transition metal dichalcogenides (TMDs). A typical device structure was formed by stacking a semiconducting monolayer WS2 onto two metallic few-layer MoTe2 flakes. Due to the Schottky barrier formed between the TMD layers and their atomic thicknesses, the dark current of the APD is greatly reduced down to 93 pA. In addition, the APD can operate through a broad spectral range from visible to near-infrared region, with a responsivity of 6.02 A/W, an external quantum efficiency of 1,406%, and an avalanche gain of 587. We believe that the 2D APD demonstrated here provides a feasible approach for developing all-2D optoelectronic devices with simultaneous high-sensitivity and low noise.

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, and the scarcity of data on the ionization coefficients restrain the development and application of ZnO APD. Furthermore, ZnO APD has been seldom reported before. In this work, we employed a p-Si/i-ZnO/n-AZO structure to successfully realize electron avalanche multiplication. Based on this structure, we investigated the band structure, field profile, Current–Voltage (I-V) characteristics, and avalanche gain. To examine the influence of the width of the i-ZnO layer on the performance, we changed the i-ZnO layer thickness to 250, 500, and 750 nm. The measured breakdown voltages agree well with the corresponding threshold electric field strengths that we calculated. The agreement between the experimental data and calculated results supports our analysis. Finally, we provide data on the impact ionization coefficients of electrons for ZnO along the (001) direction, which is of great significance in designing high-performance low excess noise ZnO APD. Our work lays a foundation to realize a high-performance ZnO-based avalanche device.

Effect of plasma elongation on current dynamics during tokamak disruptions

Plasma terminating disruptions in tokamaks may result in relativistic runaway electron beams with potentially serious consequences for future devices with large plasma currents. In this paper, we investigate the effect of plasma elongation on the coupled dynamics of runaway generation and resistive diffusion of the electric field. We find that elongated plasmas are less likely to produce large runaway currents, partly due to the lower induced electric fields associated with larger plasmas, and partly due to direct shaping effects, which mainly lead to a reduction in the runaway avalanche gain.

InGaAs APD matrix sensors for SWIR gated viewing

Short-wavelength infrared (SWIR) detection systems are increasingly in demand for surveillance, reconnaissance, and remote sensing applications. Eye-safe SWIR lasers can be utilized for active imaging systems with high image contrast and long detection range. The gated-viewing (GV) technique using short-pulse lasers and fast-gated cameras in the nanosecond range enables utilizing the distance information in addition to the signal intensity of the acquired images. The InGaAs material system is very well suited for the fabrication of high-performance SWIR photodetectors providing a typical cutoff wavelength of 1.7 μm, which covers the emission lines of available laser sources at typical telecom wavelengths around 1.55 μm. However, the usually short integration times needed for GV leads to very small photosignals. We report on the development of SWIR avalanche photodetector (APD) arrays with 640 × 512 pixels and 15 μm pixel pitch based on the InGaAs material system. The InGaAs-APD focal plane arrays have been successfully integrated into SWIR cameras which yield gain values of M ≈ 10 on camera level at a reverse bias voltage around 21 V and are the first InGaAs-based SWIR cameras worldwide providing a 640 × 512 image format and utilizing avalanche gain for signal amplification. The camera performance is demonstrated by SWIR laser GV sample images.

Modeling the e-APD SAPHIRA/C-RED ONE camera at low flux level

Context. We implement an electron avalanche photodiode (e-APD) in the MIRC-X instrument, which is an upgrade of the six-telescope near-infrared imager MIRC, at the CHARA array. This technology should improve the sensitivity of near-infrared interferometry. Aims. We aim to characterize a near-infrared C-RED ONE camera from First Light Imaging (FLI) using an e-APD from Leonardo (previously SELEX). Methods. We first used the classical mean-variance analysis to measure the system gain and the amplification gain. We then developed a physical model of the statistical distribution of the camera output signal. This model is based on multiple convolutions of the Poisson statistic, the intrinsic avalanche gain distribution, and the observed distribution of the background signal. At low flux level, this model independently constrains the incident illumination level, the total gain, and the excess noise factor of the amplification. Results. We measure a total transmission of 48 ± 3% including the cold filter and the Quantum Efficiency. We measure a system gain of 0.49 ADU/e, a readout noise of 10 ADU, and amplification gains as high as 200. These results are consistent between the two methods and therefore validate our modeling approach. The measured excess noise factor based on the modeling is 1.47 ± 0.03, with no obvious dependency with flux level or amplification gain. Conclusions. The presented model allows the characteristics of the e-APD array to be measured at low flux level independently of a preexisting calibration. With < 0.3 electron equivalent readout noise at kilohertz frame rates, we confirm the revolutionary performances of the camera with respect to the PICNIC or HAWAII technologies. However, the measured excess noise factor is significantly higher than what is claimed in the literature (< 1.25), and explains why counting multiple photons remains challenging with this camera.