Carrier Injection in High Gain GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 602-605
Author(s):  
Li Zheng ◽  
Hong Liu
Keyword(s):  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Filaments ◽  
The Impact ◽  
Photo Ionization

The carrier injection in high gain semi-insulating GaAs photoconductive semiconductor switches (PCSS) is studied. A great quantity of carrier generation in the insulating region of the GaAs PCSS depends upon photo-ionization and impact ionization. The impact ionization avalanche carrier generation exists in the electron avalanche domains (EAD). The EAD is closely related to the growing domains associated with carrier injection. Carriers are injected either at the contacts (Cathode and Anode) or at the tip of the current filaments which works as a “contact reaching further into the gap”. Carrier injection plays an important role for the EAD formation.

Electron Avalanche Domains in High Gain Semi-Insulating GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 619-622
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiao Ling Zhu ◽  
Song Hui Dai ◽  
...  
Keyword(s):  
Carrier Density ◽  
High Field ◽  
Impact Ionization ◽  
High Gain ◽  
Electron Avalanche ◽  
Carrier Injection ◽  
Carrier Generation ◽  
Semiconductor Switches ◽  
Current Voltage ◽  
High Carrier

The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from theN-shaped current-voltage (I-V) characteristics toS-shapedI-Vcharacteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments.

Spontaneous Radiation Energy of Current Filaments in GaAs Photoconductive Semiconductor Switches

2013 ◽  
Vol 423-426 ◽  
pp. 2659-2662
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Hong Jun Yang ◽  
Wei Yang ◽  
Yong Lin Zheng
Keyword(s):  
Radiative Recombination ◽  
Physical Method ◽  
Radiation Energy ◽  
High Gain ◽  
Recombination Coefficient ◽  
Radiation Wavelength ◽  
Spontaneous Radiation ◽  
Semiconductor Switches ◽  
Optical Output ◽  
Current Filaments

The spontaneous radiation energy of the current filaments in high gain GaAs photoconductive semiconductor switches (PCSS) is quantificationally analyzed. The spontaneous radiation formula of the current filaments was derived. The concept of the distribution function of the radiation intensity dependent on radiation wavelength was first introduced in GaAs samples. The radiative recombination coefficients of four peak wavelengths were estimated by the statistical-physical method in high gain GaAs PCSS. Calculated according to the radiative recombination coefficient of 890 nm radiation, the spontaneous radiation energies are consistent with the experimental observations. This explains the observations about optical output energy versus filament current.

Carrier generation in high gain GaAs photoconductive semiconductor switches

2015 ◽  
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiaoling Zhu ◽  
Yuting Yang ◽  
...  
Keyword(s):  
High Gain ◽  
Carrier Generation ◽  
Semiconductor Switches

Photoionization in GaAs Photoconductive Semiconductor Switches

2014 ◽  
Vol 941-944 ◽  
pp. 631-634
Author(s):  
Hong Liu ◽  
Li Zheng ◽  
Wei Yang ◽  
Xiao Qian Wang ◽  
Song Hui Dai ◽  
...  
Keyword(s):  
Carrier Density ◽  
Dominant Role ◽  
High Gain ◽  
Average Density ◽  
Maximum Density ◽  
Distribution Characteristics ◽  
Key Factors ◽  
Current Filament ◽  
Semiconductor Switches ◽  
Current Filaments

The density distribution characteristics of non-equilibrium carrier from spontaneous emission ahead of the tip of the current filaments in high gain semi-insulating GaAs photoconductive semiconductor switches are analyzed. The results show that the ratio of volume to area of the current filament and the average carrier density in the current filaments are two key factors that affect the photoionization effects of the current filaments. The reabsorption of wavelengths λ ≤ 876 nm radiations plays a dominant role in producing the maximum carrier density. The maximum density of photo-generated carrier is approximately 1~3 orders of magnitude lower than the average density of excess carrier inside the current filaments.

scholarly journals Fiber-optic Control Of Current Filaments In High Gain Photoconductive Semiconductor Switches

2005 ◽  
Author(s):  
F.J. Zutavern ◽  
G.M. Loubriel ◽  
W.D. Helgeson ◽  
M.W. O'Malley ◽  
R.R. Gallegos ◽  
...  
Keyword(s):  
Fiber Optic ◽  
High Gain ◽  
Semiconductor Switches ◽  
Current Filaments

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

Measurement of the impact ionization rates in Al0.06Ga0.94Sb

1990 ◽  
Vol 57 (3) ◽  
pp. 249-251 ◽  
Author(s):  
H. Kuwatsuka ◽  
T. Mikawa ◽  
S. Miura ◽  
N. Yasuoka ◽  
Y. Kito ◽  
...  
Keyword(s):  
Impact Ionization ◽  
The Impact ◽  
Ionization Rates
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