Large Electron Emission Current and High Electron Emission Stability of Hexagonal Close-packed Multi-lamination-layer Carbon Nanotube Cathode

2018 ◽  
Vol 47 (5) ◽  
pp. 525002
Author(s):  
李玉魁 LI Yu-kui ◽  
刘云朋 LIU Yun-peng ◽  
武超 WU Chao ◽  
杨娟 YANG Juan
Keyword(s):  
Carbon Nanotube ◽  
Electron Emission ◽  
Emission Current ◽  
High Electron ◽  
Hexagonal Close Packed ◽  
Emission Stability

Metal bonded carrier for high electron emission carbon nanotube emitters

2012 ◽  
Author(s):  
Su Woong Lee ◽  
Young Ju Eom ◽  
Hae Na Won ◽  
Jung Su Gang ◽  
Jin Jang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electron Emission ◽  
High Electron

scholarly journals Fabrication of Stable Carbon Nanotube Cold Cathode Electron Emitters with Post-Growth Electrical Aging

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 648 ◽  
Author(s):  
Jung Hyun Kim ◽  
Jung Su Kang ◽  
Kyu Chang Park
Keyword(s):  
Carbon Nanotube ◽  
Electron Emission ◽  
Emission Current ◽  
Cold Cathode ◽  
Time Stability ◽  
Field Emitters ◽  
Initial Stage ◽  
Electrical Aging ◽  
Long Time ◽  
Electron Emitters

We fabricated carbon nanotube (CNT) cold cathode emitters with enhanced and stable electron emission properties and long-time stability with electrical aging as a post-treatment. Our CNT field emitters showed improved electrical properties by electrical aging. We set the applied bias for effective electrical aging, with the bias voltage defined at the voltage where Joule heating appeared. At the initial stage of aging, the electron emission current started to increase and then was saturated within 3 h. We understood that 5 h aging time was enough at proper aging bias. If the aging bias is higher, excessive heating damages CNT emitters. With the electrical aging, we obtained improved electron emission current from 3 mA to 6 mA. The current of 6 mA was steadily driven for 9 h.

A Fabrication of the High Emitter-Isolating-Layer for Printed Cold Cathode in Field Emission Display Panel

2012 ◽  
Vol 459 ◽  
pp. 567-570
Author(s):  
Xiao Quan Li
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Electron Emission ◽  
Emission Current ◽  
Field Emission Property ◽  
Cold Cathode ◽  
Field Emission Display ◽  
Field Emitters ◽  
Cathode Electrode ◽  
Insulation Performance

Using black insulation slurry as manufacture material, the high emitter-isolating-layer was fabricated on the cathode plate. The high emitter-isolating-layer which possessed good insulation performance was composed of many parallel emitter-isolation-stripes, which the bottom cathode electrode would be exposed in the center of the emitter-isolation-stripe. The carbon nanotube paste was prepared onto the cathode plate to form the field emitters. And the field emission display panel with high emitter-isolating-layer was demonstrated, which the better field emission property including the large emission current and stable electron emission was confirmed.

scholarly journals Study on enhanced electron emission current of carbon nanotube by thermal and HF treatments

2008 ◽  
Vol 17 (2) ◽  
pp. 90-95 ◽  
Author(s):  
K.S. Kim ◽  
J.H. Ryu ◽  
C.S. Lee ◽  
H.E. Lim ◽  
J.S. Ahn ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electron Emission ◽  
Emission Current

42.3: Controlled Electron Emission Current with Carbon Nanotube Emitters Array Grown with RAP Process

2007 ◽  
Vol 38 (1) ◽  
pp. 1417-1420 ◽  
Author(s):  
Kyu Chang Park ◽  
Je Hwang Ryu ◽  
Yi Yin Yu ◽  
Ki Seo Kim ◽  
Jong Hyun Moon ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electron Emission ◽  
Emission Current

Phosphorus Doped Diamond Electron Emitter Devices

2007 ◽  
Vol 1039 ◽  
Author(s):  
Natsuo Tatsumi ◽  
Akihiko Ueda ◽  
Keisuke Tanizaki ◽  
Yoshiki Nishibayashi ◽  
Takahiro Imai
Keyword(s):  
Single Crystal ◽  
Threshold Voltage ◽  
Electron Emission ◽  
Emission Current ◽  
Diamond Surface ◽  
High Electron ◽  
Emission Properties ◽  
Single Crystal Diamond ◽  
Current Electron ◽  
Phosphorus Doped

AbstractThe n-type diamond is known to have high electron emission properties. However, device fabrication on n-type phosphorus doped diamond had 2 difficulties. First, because highly phosphorus doped n-type diamond layer can be grown only on very small (111) diamond substrate, fabrication of highly homogeneous 3 dimensional device such as gate electrode was very difficult. Second problem was that the resistivity of n-type diamond was still over 100 Ω cm and too high for high current electron emission devices. To solve these problems, we developed a new large size composite wafer in which (111) single crystal diamond was buried in polycrystal diamond and a new electrode coated emitter tip structure for conduction support only whose apex was exposed from the electrode. N-type phosphorus doped diamond was grown on the 15 mm composite diamond wafer with high PH3/CH4 concentration of 20% and highly doped active layer was grown on the embedded (111) single crystal. Sharp emitter tip arrays were fabricated by etching the n-type diamond. Electrodes were coated on these tips and exposed area of diamond was less than 200 nm from the apex of the tip. Gate electrodes were fabricated for each emitter tips. Electron emission of these devices were measured in the vacuum of 10−7 Pa. The threshold voltage of the n-type diamond device was 60 V which was lower than 100 V of the p-type diamond device. The threshold voltage of n-type diamond with and without electrode coatings did not changed. This means that electrode coating did not affect the emission properties and electrons were emitted from the diamond surface. The emission current was enhanced by 2 orders by the electrode coatings and total emission current from 1 mm2 reached 1103 mA. This high emission current electron source enables applications to microwave tubes, electron beam processing and integrated micro vacuum devices.

Effect of space charge on vacuum pre-breakdown voltage and electron emission current

2021 ◽  
Vol 129 (15) ◽  
pp. 155102
Author(s):  
B. Seznec ◽  
Ph. Dessante ◽  
Ph. Teste ◽  
T. Minea
Keyword(s):  
Space Charge ◽  
Breakdown Voltage ◽  
Electron Emission ◽  
Emission Current
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