Fast response Rogowski coil with magnetic core

2010 ◽  
Vol 22 (8) ◽  
pp. 1954-1958
Author(s):  
张瑜 Zhang Yu ◽  
刘金亮 Liu Jinliang ◽  
白国强 Bai Guoqiang ◽  
梁波 Liang Bo ◽  
冯加怀 Feng Jiahuai
2006 ◽  
Vol 8 (4) ◽  
pp. 457-460 ◽  
Author(s):  
Zhu Jundong ◽  
Zhang Qiaogen ◽  
Jia Jiangbo ◽  
Tao Fengbo ◽  
Yang Liandian ◽  
...  

2021 ◽  
Author(s):  
Wenting Li ◽  
Zhaozhi Long ◽  
Jiawei Fan ◽  
Kangmin Hu ◽  
Shaobo Liu ◽  
...  

Measurement ◽  
2012 ◽  
Vol 45 (5) ◽  
pp. 1277-1285 ◽  
Author(s):  
Yu Zhang ◽  
Jinliang Liu ◽  
Guoqiang Bai ◽  
Jiahuai Feng

Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.


The Analyst ◽  
2020 ◽  
Vol 145 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Wanda V. Fernandez ◽  
Rocío T. Tosello ◽  
José L. Fernández

Gas diffusion electrodes based on nanoporous alumina membranes electrocatalyze hydrogen oxidation at high diffusion-limiting current densities with fast response times.


2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...


2013 ◽  
Vol 133 (11) ◽  
pp. 1073-1081 ◽  
Author(s):  
Hirooki Tokoi ◽  
Kinya Kobayashi ◽  
Hideaki Nagashima ◽  
Shuichi Ishizawa ◽  
Yuji Enomoto

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