Preparation of High-Temperature Sample Grids for Cryo-EM

Abstract This paper presents the design, performance, and operational characteristics of a new direct reading instrument for determining nitrogen in cereal and grain. Precision, accuracy, range, speed, ease of operation, sensitivity, sample size, and flexibility of the instrument are presented. Results on various cereals and grains are presented and compared with those obtained by the Kjeldahl technique. The apparatus is the result of research for a rapid method for determining nitrogen in organic material. The instrument uses a combination of a unique high temperature sample oxidation, a sampling valve for separating combustion products, and thermal conductivity detection for the liberated nitrogen in a helium carrier gas.

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High-temperature sample holder for fast-atom bombardment mass spectrometry of molten materials

Analytical Chemistry ◽

10.1021/ac00130a039 ◽

1987 ◽

Vol 59 (3) ◽

pp. 537-539 ◽

Cited By ~ 3

Author(s):

Robert J. Doyle

Keyword(s):

Mass Spectrometry ◽

High Temperature ◽

Fast Atom Bombardment ◽

Sample Holder ◽

Molten Materials ◽

Temperature Sample

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A versatile high-temperature sample holder for simultaneous measurement of electrical conductivity of four pellet samples

Journal of Physics E Scientific Instruments ◽

10.1088/0022-3735/21/12/018 ◽

1988 ◽

Vol 21 (12) ◽

pp. 1203-1204 ◽

Cited By ~ 1

Author(s):

M A K L Dissanayake ◽

M A Careem

Keyword(s):

Electrical Conductivity ◽

High Temperature ◽

Simultaneous Measurement ◽

Sample Holder ◽

Temperature Sample

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Peotoemission Study of Si (001) Surfaces Exposed to as Flux

MRS Proceedings ◽

10.1557/proc-148-285 ◽

1989 ◽

Vol 148 ◽

Author(s):

H. Okumura ◽

K. Miki ◽

K. Sakamoto ◽

T. Sakamoto ◽

S. Misawa ◽

...

Keyword(s):

High Temperature ◽

Low Temperature ◽

Temperature Dependence ◽

Electronic Structures ◽

Low Temperatures ◽

Dimer Model ◽

Surface And Interface ◽

High And Low Temperatures ◽

Interface Structures ◽

Temperature Sample

ABSTRACTPhotoemission spectra (XPS and UPS) of As-covered Si (001) surfaces prepared at high (>600ºC) and low (<450ºC) temperatures and GaAs epilayers subsequently grown on them were measured without exposing to air. It was found that the surface electronic structures of As/Si prepared at the low temperature are different from those of the high temperature sample, the spectra of which can be interpreted as a symmetric dimer model. Differences were also observed between the GaAs epilayers on the As—covered Si surfaces prepared at the high and low temperatures. The temperature dependence of the surface and interface structures are discussed.

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