scholarly journals Extending Counter-streaming Motion from an Active Region Filament to a Sunspot Light Bridge

2018 ◽  
Vol 852 (1) ◽  
pp. L18 ◽  
Author(s):  
Haimin Wang ◽  
Rui Liu ◽  
Qin Li ◽  
Chang Liu ◽  
Na Deng ◽  
...  
2020 ◽  
Vol 36 (3) ◽  
pp. 69-90
Author(s):  
S. N. Chornogor ◽  
◽  
N. N. Kondrashova ◽  

2020 ◽  
Author(s):  
Zenghui Yang

Quantum mechanics/molecular mechanics (QM/MM) methods partition the system into active and environmental regions and treat them with different levels of theory, achieving accuracy and efficiency at the same time. Adaptive-partitioning (AP) QM/MM methods allow on-the-fly changes to the QM/MM partitioning of the system. Many of the available energy-based AP-QM/MM methods partition the system according to distances to pre-chosen centers of active regions. For such AP-QM/MM methods, I develop an adaptive-center (AC) method that allows on-the-fly determination of the centers of active regions according to general geometrical or potential-related criteria, extending the range of application of energy-based AP-QM/MM methods to systems where active regions may occur or vanish during the simulation.


2020 ◽  
Vol 60 (7) ◽  
pp. 936-941
Author(s):  
M. I. Savchenko ◽  
P. V. Vatagin ◽  
P. B. Dmitriev ◽  
M. G. Ogurtsov ◽  
E. M. Kruglov ◽  
...  

1999 ◽  
Vol 523 (1) ◽  
pp. 432-443 ◽  
Author(s):  
J. T. Schmelz ◽  
J. L. R. Saba ◽  
K. T. Strong ◽  
H. D. Winter ◽  
J. W. Brosius

2019 ◽  
Vol 623 ◽  
pp. A176 ◽  
Author(s):  
L. P. Chitta ◽  
A. R. C. Sukarmadji ◽  
L. Rouppe van der Voort ◽  
H. Peter

Context. Densely packed coronal loops are rooted in photospheric plages in the vicinity of active regions on the Sun. The photospheric magnetic features underlying these plage areas are patches of mostly unidirectional magnetic field extending several arcsec on the solar surface. Aims. We aim to explore the transient nature of the magnetic field, its mixed-polarity characteristics, and the associated energetics in the active region plage using high spatial resolution observations and numerical simulations. Methods. We used photospheric Fe I 6173 Å spectropolarimetric observations of a decaying active region obtained from the Swedish 1-m Solar Telescope (SST). These data were inverted to retrieve the photospheric magnetic field underlying the plage as identified in the extreme-ultraviolet emission maps obtained from the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO). To obtain better insight into the evolution of extended unidirectional magnetic field patches on the Sun, we performed 3D radiation magnetohydrodynamic simulations of magnetoconvection using the MURaM code. Results. The observations show transient magnetic flux emergence and cancellation events within the extended predominantly unipolar patch on timescales of a few 100 s and on spatial scales comparable to granules. These transient events occur at the footpoints of active region plage loops. In one case the coronal response at the footpoints of these loops is clearly associated with the underlying transient. The numerical simulations also reveal similar magnetic flux emergence and cancellation events that extend to even smaller spatial and temporal scales. Individual simulated transient events transfer an energy flux in excess of 1 MW m−2 through the photosphere. Conclusions. We suggest that the magnetic transients could play an important role in the energetics of active region plage. Both in observations and simulations, the opposite-polarity magnetic field brought up by transient flux emergence cancels with the surrounding plage field. Magnetic reconnection associated with such transient events likely conduits magnetic energy to power the overlying chromosphere and coronal loops.


Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1600
Author(s):  
Matthew Gaddy ◽  
Vladimir Kuryatkov ◽  
Nicholas Wilson ◽  
Andreas Neuber ◽  
Richard Ness ◽  
...  

The suitability of GaN PCSSs (photoconductive semiconductor switches) as high voltage switches (>50 kV) was studied using a variety of commercially available semi-insulating GaN wafers as the base material. Analysis revealed that the wafers’ physical properties were noticeably diverse, mainly depending on the producer. High Voltage PCSSs were fabricated in both vertical and lateral geometry with various contacts, ohmic (Ti/Al/Ni/Au or Ni/Au), with and without a conductive n-GaN or p-type layer grown by metal-organic chemical vapor deposition. Inductively coupled plasma (ICP) reactive ion etching (RIE) was used to form a mesa structure to reduce field enhancements allowing for a higher field to be applied before electrical breakdown. The length of the active region was also varied from a 3 mm gap spacing to a 600 µm gap spacing. The shorter gap spacing supports higher electric fields since the number of macro defects within the device’s active region is reduced. Such defects are common in hydride vapor phase epitaxy grown samples and are likely one of the chief causes for electrical breakdown at field levels below the bulk breakdown field of GaN. Finally, the switching behavior of PCSS devices was tested using a pulsed, high voltage testbed and triggered by an Nd:YAG laser. The best GaN PCSS fabricated using a 600 µm gap spacing, and a mesa structure demonstrated a breakdown field strength as high as ~260 kV/cm.


2012 ◽  
Vol 1432 ◽  
Author(s):  
Ryan M. France ◽  
Myles A. Steiner

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.


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