scholarly journals GaN-Based PCSS with High Breakdown Fields

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1600
Author(s):  
Matthew Gaddy ◽  
Vladimir Kuryatkov ◽  
Nicholas Wilson ◽  
Andreas Neuber ◽  
Richard Ness ◽  
...  
Keyword(s):  
Active Region ◽  
High Voltage ◽  
Electrical Breakdown ◽  
Base Material ◽  
Hydride Vapor Phase Epitaxy ◽  
Switching Behavior ◽  
Breakdown Field ◽  
Organic Chemical ◽  
Mesa Structure ◽  
Gap Spacing

The suitability of GaN PCSSs (photoconductive semiconductor switches) as high voltage switches (>50 kV) was studied using a variety of commercially available semi-insulating GaN wafers as the base material. Analysis revealed that the wafers’ physical properties were noticeably diverse, mainly depending on the producer. High Voltage PCSSs were fabricated in both vertical and lateral geometry with various contacts, ohmic (Ti/Al/Ni/Au or Ni/Au), with and without a conductive n-GaN or p-type layer grown by metal-organic chemical vapor deposition. Inductively coupled plasma (ICP) reactive ion etching (RIE) was used to form a mesa structure to reduce field enhancements allowing for a higher field to be applied before electrical breakdown. The length of the active region was also varied from a 3 mm gap spacing to a 600 µm gap spacing. The shorter gap spacing supports higher electric fields since the number of macro defects within the device’s active region is reduced. Such defects are common in hydride vapor phase epitaxy grown samples and are likely one of the chief causes for electrical breakdown at field levels below the bulk breakdown field of GaN. Finally, the switching behavior of PCSS devices was tested using a pulsed, high voltage testbed and triggered by an Nd:YAG laser. The best GaN PCSS fabricated using a 600 µm gap spacing, and a mesa structure demonstrated a breakdown field strength as high as ~260 kV/cm.

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

On the Mechanism of High-Voltage Pulsed Fragmentation from Electrical Breakdown Process

2021 ◽  
Author(s):  
Xiaohua Zhu ◽  
Yunxu Luo ◽  
Weiji Liu ◽  
Ling He ◽  
Rui Gao ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Breakdown ◽  
Breakdown Process

scholarly journals The Effects of Aluminum-Nitride Nano-Fillers on the Mechanical, Electrical, and Thermal Properties of High Temperature Vulcanized Silicon Rubber for High-Voltage Outdoor Insulator Applications

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3562 ◽  
Author(s):  
Chang Liu ◽  
Yiwen Xu ◽  
Daoguang Bi ◽  
Bing Luo ◽  
Fuzeng Zhang ◽  
...  
Keyword(s):  
Contact Angle ◽  
Thermal Properties ◽  
High Temperature ◽  
High Voltage ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Theoretical Models ◽  
Dielectric Constants ◽  
Silicon Rubber ◽  
Electrical Breakdown Strength

AlN nanoparticles were added into commercial high-temperature-vulcanized silicon rubber composites, which were designed for high-voltage outdoor insulator applications. The composites were systematically studied with respect to their mechanical, electrical, and thermal properties. The thermal conductivity was found to increase greatly (>100%) even at low fractions of the AlN fillers. The electrical breakdown strength of the composites was not considerably affected by the AlN filler, while the dielectric constants and dielectric loss were found to be increased with AlN filler ratios. At higher doping levels above 5 wt% (~2.5 vol%), electrical tracking performance was improved. The AlN filler increased the tensile strength as well as the hardness of the composites, and decreased their flexibility. The hydrophobic properties of the composites were also studied through the measurements of temperature-dependent contact angle. It was shown that at a doping level of 1 wt%, a maximum contact angle was observed around 108°. Theoretical models were used to explain and understand the measurement results. Our results show that the AlN nanofillers are helpful in improving the overall performances of silicon rubber composite insulators.

scholarly journals Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

2020 ◽  
Vol 10 (9) ◽  
pp. 3050 ◽  
Author(s):  
Aditya Prabaswara ◽  
Jens Birch ◽  
Muhammad Junaid ◽  
Elena Alexandra Serban ◽  
Lars Hultman ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Alternative Methods ◽  
Organic Chemical ◽  
Large Area ◽  
Material Quality ◽  
Pulsed Dc ◽  
Metal Organic ◽  
Magnetron Sputter

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic-grade GaN. In this article, we review the basics of reactive sputtering for MSE growth of GaN using a liquid Ga target. Various target biasing schemes are discussed, including direct current (DC), radio frequency (RF), pulsed DC, and high-power impulse magnetron sputtering (HiPIMS). Examples are given for MSE-grown GaN thin films with material quality comparable to those grown using alternative methods such as molecular-beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE). In addition, successful GaN doping and the fabrication of practical devices have been demonstrated. Beyond the planar thin film form, MSE-grown GaN nanorods have also been demonstrated through self-assembled and selective area growth (SAG) method. With better understanding in process physics and improvements in material quality, MSE is expected to become an important technology for the growth of GaN.

Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling

2020 ◽  
Vol 54 (2) ◽  
pp. 258-262 ◽  
Author(s):  
N. M. Lebedeva ◽  
N. D. Il’inskaya ◽  
P. A. Ivanov
Keyword(s):  
High Voltage ◽  
Mesa Structure ◽  
Edge Termination

Investigation of Electrical Breakdown in Air Using an Image Processing Technique

1992 ◽  
Vol 29 (4) ◽  
pp. 313-320 ◽  
Author(s):  
D. B. Watson ◽  
M. I. Barber ◽  
K. A. Samuels
Keyword(s):  
Image Processing ◽  
High Voltage ◽  
Electrical Breakdown ◽  
Processing Technique ◽  
Image Processing Technique ◽  
Track Segment ◽  
Video Recordings ◽  
High Voltage Breakdown ◽  
Logarithmic Distribution ◽  
Voltage Breakdown

Investigation of electrical breakdown in air using an image processing technique Video recordings of high-voltage breakdown tracks between electrodes in air have been analysed using an image processing technique. The paper discusses the tortuosity of the breakdown tracks, and a logarithmic distribution of track segment lengths has been found.

Electrical Breakdown Characteristics and Testing of High Voltage XLPE and EPR Insulated Cables

1983 ◽  
Vol PER-3 (7) ◽  
pp. 41-42 ◽  
Author(s):  
G. Bahder ◽  
M. Sosnowski ◽  
C. Katz ◽  
R. Eaton ◽  
K. Klein
Keyword(s):  
High Voltage ◽  
Electrical Breakdown
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