Microwave annealing, a low-thermal-budget process for dopant activation in phosphorus-implanted MOSFET devices

2016 ◽  
Vol 69 (5) ◽  
pp. 762-766
Author(s):  
Cheol-Min Lim ◽  
Won-Ju Cho
Keyword(s):  
Budget Process ◽  
Thermal Budget ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Low Thermal Budget

Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

2013 ◽  
Vol 34 (9) ◽  
pp. 1157-1159 ◽  
Author(s):  
Chur-Shyang Fuh ◽  
Po-Tsun Liu ◽  
Li-Feng Teng ◽  
Sih-Wei Huang ◽  
Yao-Jen Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Budget Process ◽  
Thermal Budget ◽  
Microwave Annealing ◽  
Low Thermal Budget

scholarly journals Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-x Sn x on SiO2 fabricated by a low thermal budget process

2019 ◽  
Vol 12 (5) ◽  
pp. 051016
Author(s):  
Kouta Takahashi ◽  
Hiroshi Ikenoue ◽  
Mitsuo Sakashita ◽  
Osamu Nakatsuka ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Generator ◽  
Budget Process ◽  
Thermal Budget ◽  
Low Thermal Budget

Catalytic Oxidation of Silicon Nitride thin films Using Potassium*

1988 ◽  
Vol 131 ◽  
Author(s):  
J. W. Rogers ◽  
D. S. Blair ◽  
C. H. F. Peden
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Thermal Oxidation ◽  
Catalytic Oxidation ◽  
Budget Process ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Time Requirements ◽  
Low Thermal Budget ◽  
Temperature Time

ABSTRACTThin silicon nitride films on a Si(100) substrate have been oxidized using potassium in a low thermal budget process. The presence of potassium on the SisN4 surface greatly lowers the temperature-time requirements for oxidation as compared with direct thermal oxidation.

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