scholarly journals Temperature-dependent nonequilibrium carrier dynamics in epitaxial and bulk 4H-SiC

2006 ◽  
Vol 46 (2) ◽  
pp. 199-204 ◽  
Author(s):  
K. Neimontas
Keyword(s):  
Carrier Dynamics ◽  
Nonequilibrium Carrier ◽  
Temperature Dependent

Few-Particle Effects in Nonlinear Optical Spectra of Semiconductor Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ulrich Hohenesteri ◽  
Fausto Rossi ◽  
Elisa Molinari
Keyword(s):  
Quantum Dots ◽  
Density Matrix ◽  
Nonlinear Optical ◽  
Coherent Control ◽  
Optical Spectra ◽  
Carrier Dynamics ◽  
Semiconductor Quantum Dots ◽  
Nonequilibrium Carrier ◽  
Optical Nonlinearities ◽  
Matrix Approach

ABSTRACTWe present a density-matrix approach for the description of nonequilibrium carrier dynamics in optically excited semiconductor quantum dots, that explicitly accounts for exciton-exciton as well as exciton-carrier interactions. Within this framework, we analyze few-particle effects in the optical spectra and provide a consistent description of additional peaks appearing at high photoexcitation density. We discuss possible applications of such optical nonlinearities in future coherent-control experiments.

scholarly journals Time-Resolved Transient Grating Spectroscopy for Studies of Nonequilibrium Carrier Dynamics in Wide Band-Gap Semiconductors

2006 ◽  
Vol 110 (2) ◽  
pp. 201-209 ◽  
Author(s):  
K. Jarašiūnas ◽  
T. Malinauskas ◽  
K. Neimontas ◽  
V. Gudelis ◽  
R. Aleksiejūnas
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Carrier Dynamics ◽  
Nonequilibrium Carrier ◽  
Transient Grating ◽  
Wide Band Gap ◽  
Time Resolved ◽  
Wide Band Gap Semiconductors ◽  
Transient Grating Spectroscopy ◽  
Grating Spectroscopy

Nonequilibrium Carrier Dynamics in GaAs Semiconductors Induced by Energetic Ions

1990 ◽  
pp. 300-302
Author(s):  
D. McMorrow ◽  
A. R. Knudson ◽  
A. B. Campbell
Keyword(s):  
Carrier Dynamics ◽  
Nonequilibrium Carrier ◽  
Energetic Ions

scholarly journals Photoemission signatures of nonequilibrium carrier dynamics from first principles

2020 ◽  
Vol 101 (3) ◽  
Author(s):  
Fabio Caruso ◽  
Dino Novko ◽  
Claudia Draxl
Keyword(s):  
First Principles ◽  
Carrier Dynamics ◽  
Nonequilibrium Carrier

In situ measurement of temperature dependent picosecond resolved carrier dynamics in near infrared (NIR) sensitive device on action

2019 ◽  
Vol 90 (4) ◽  
pp. 043909 ◽  
Author(s):  
Jayita Patwari ◽  
Arka Chatterjee ◽  
Hemant Ghadi ◽  
Hemant Sharma ◽  
Subhananda Chakrabarti ◽  
...  
Keyword(s):  
Near Infrared ◽  
Carrier Dynamics ◽  
In Situ Measurement ◽  
Temperature Dependent

scholarly journals Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

2016 ◽  
Vol 31 (4) ◽  
pp. 045006 ◽  
Author(s):  
John Serafini ◽  
Yunus Akbas ◽  
Lucas Crandall ◽  
Robert Bellman ◽  
Carlo Kosik Williams ◽  
...  
Keyword(s):  
Thin Films ◽  
Photovoltaic Cells ◽  
Carrier Dynamics ◽  
Nonequilibrium Carrier ◽  
Time Resolved

Temperature-Dependent Energy Gap Shift and Thermally Activated Transition in Multilayer CdTe/ZnTe Quantum Dots

2015 ◽  
Vol 15 (10) ◽  
pp. 8120-8124
Author(s):  
Minh Tan Man ◽  
Hong Seok Lee
Keyword(s):  
Quantum Dots ◽  
Energy Gap ◽  
Average Energy ◽  
Growth Conditions ◽  
Carrier Dynamics ◽  
Phonon Coupling ◽  
Temperature Quenching ◽  
Temperature Dependent ◽  
Thermally Activated ◽  
Best Fit

We investigated the influence of growth conditions on carrier dynamics in multilayer CdTe/ZnTe quantum dots (QDs) by monitoring the temperature dependence of the photoluminescence emission energy. The results were analyzed using the empirical Varshni and O’Donnell relations for temperature variation of the energy gap shift. Best fit values showed that the thermally activated transition between two different states occurs due to band low-temperature quenching with values separated by 5.0–6.5 meV. The addition of stack periods in multilayer CdTe/ZnTe QDs plays an important role in the energy gap shift, where the exciton binding energy is enhanced, and, conversely, the exciton-phonon coupling strength is suppressed with an average energy of 19.3–19.8 meV.

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