Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

A set of single quantum well (SQW) samples of GaAs1-xBix with x ~ 0.1 and p-doped GaAs barriers grown by molecular beam epitaxy was investigated by the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a high crystalline quality, a smooth surface and sharp interfaces between the layers and exhibited a high PL intensity and a lower than 100 meV PL linewidth of QW structures. Temperature dependence of the optical transition energy was S-shape-free for all investigated structures and it was weaker than that of GaAs. An analysis of the carrier recombination mechanism was also carried out indicating that the radiative recombination is dominant even at room temperature. Moreover, numerical calculations revealed that a higher Be doping concentration leads to an increased overlap of the electron and heavy hole wave functions and determines a higher PL intensity.

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Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Light, Energy and the Environment ◽

10.1364/fts.2016.jw4a.7 ◽

2016 ◽

Author(s):

Quoc-Hung Pham ◽

Jyh-Chen Chen ◽

Farn-Shiun Hwu ◽

Huy-Bich Nguyen

Keyword(s):

Quantum Well ◽

Light Emitting Diode ◽

Efficiency Droop ◽

Effect Of Temperature ◽

Single Quantum ◽

Temperature Dependent ◽

Single Quantum Well ◽

Light Emitting ◽

Carrier Recombination

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Study of temperature-dependent exciton dynamics in a single quantum well with self-assembled islands

Surface Science ◽

10.1016/0039-6028(96)00539-0 ◽

1996 ◽

Vol 361-362 ◽

pp. 810-813 ◽

Cited By ~ 6

Author(s):

M.V. Marquezini ◽

M.J.S.P. Brasil ◽

J.A. Brum ◽

P. Poole ◽

S. Charbonneau ◽

...

Keyword(s):

Quantum Well ◽

Single Quantum ◽

Temperature Dependent ◽

Single Quantum Well ◽

Exciton Dynamics ◽

Self Assembled

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Temperature‐dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells

Journal of Applied Physics ◽

10.1063/1.361072 ◽

1996 ◽

Vol 79 (4) ◽

pp. 2139-2141 ◽

Cited By ~ 6

Author(s):

W. Z. Shen ◽

Y. Chang ◽

S. C. Shen ◽

W. G. Tang ◽

Y. Zhao ◽

...

Keyword(s):

Quantum Wells ◽

Single Quantum ◽

Temperature Dependent

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Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Solid State Communications ◽

10.1016/j.ssc.2003.09.018 ◽

2004 ◽

Vol 129 (1) ◽

pp. 31-35 ◽

Cited By ~ 20

Author(s):

A. Sasaki ◽

K. Nishizuka ◽

T. Wang ◽

S. Sakai ◽

A. Kaneta ◽

...

Keyword(s):

Quantum Well ◽

Single Quantum ◽

Single Quantum Well ◽

Carrier Recombination

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PHOTOCONDUCTIVITY, PHOTOREFLECTANCE AND PHOTOLUMINESCENCE OF GaAs-AlAs MULTIPLE QUANTUM WELLS

MRS Proceedings ◽

10.1557/proc-56-289 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 1

Author(s):

H. NEFF ◽

K. J. BACHMANN ◽

W. D. LAIDIG

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Heavy Hole ◽

Multiple Quantum Well ◽

Light Hole ◽

Multiple Quantum ◽

Indirect Transition ◽

Temperature Dependent ◽

Direct Inter ◽

Phonon Absorption

AbstractEmploying temperature dependent photoconductivity, photoluminescence and photoreflectivity measurements, we have analyzed a GaAs-AlAs multiple quantum well. The above optical techniques clearly resolve the fundamental inter-subband transitions, including heavy hole-light hole splittings. At T < 60K an anomalously high photoconductivity was discovered below the direct inter-subband transitions and is attributed tentatively to the presence of extrinsic interface states within the bandgap. For T > l00K the fundamental indirect transition was discovered and associated with LO (L) - phonon absorption.

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Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

MRS Proceedings ◽

10.1557/proc-417-265 ◽

1995 ◽

Vol 417 ◽

Cited By ~ 6

Author(s):

F. Peiró ◽

A. Cornet ◽

J. C. Ferrer ◽

J. R. Morante ◽

G. Halkias ◽

...

Keyword(s):

Quantum Wells ◽

Molecular Beam ◽

Buffer Layers ◽

Single Quantum ◽

X Ray Diffraction ◽

Single Quantum Well ◽

Quantum Well Structures ◽

X Ray ◽

Transmission Electron ◽

Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

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Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures

MRS Proceedings ◽

10.1557/proc-744-m8.31 ◽

2002 ◽

Vol 744 ◽

Author(s):

M. Geddo ◽

G. Guizzetti ◽

R. Pezzuto ◽

A. Polimeni ◽

M. Capizzi ◽

...

Keyword(s):

Binding Energy ◽

Quantum Wells ◽

Molecular Beam ◽

Heavy Hole ◽

Energy Transition ◽

Blue Shift ◽

Spectral Features ◽

Single Quantum ◽

Electron Effective Mass ◽

Gaas Substrates

ABSTRACTWe report on photoreflectance measurements performed in the 0.8–1.6 eV photon energy range in as grown and hydrogenated InxGa1-xAs1-yNy/GaAs single quantum wells grown on GaAs substrates by molecular beam epitaxy. In the hydrogenated samples, a blue-shift of all the QW spectral features and a surprising change with temperature in the nature of the lowest energy transition are found. These features are related to the interaction of H with N atoms. An increase in the binding energy of the heavy-hole exciton upon N introduction into the InxGa1-xAs lattice has been measured also and explained in terms of an increase in the electron effective mass.

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Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range

Физика и техника полупроводников ◽

10.21883/ftp.2018.04.45813.02 ◽

2018 ◽

Vol 52 (4) ◽

pp. 464

Author(s):

V.V. Rumyantsev ◽

L.S. Bovkun ◽

A.M. Kadykov ◽

M.A. Fadeev ◽

A.A. Dubinov ◽

...

Keyword(s):

Quantum Wells ◽

Optical Pumping ◽

High Energy ◽

Stimulated Emission ◽

Infrared Range ◽

Recombination Mechanism ◽

Carrier Heating ◽

Long Wavelength ◽

Carrier Recombination ◽

Long Wavelength Infrared

AbstractWe investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

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