scholarly journals Wireless Energy Transfer

Author(s):  
Aya Mabrouki ◽  
Mohamed Latrach

This chapter proposes an overview of microwave energy harvesting with focuses on the design of high efficiency low power rectifying circuits. A background survey of RF energy harvesting techniques is presented first. Then, the performances of conventional rectifier topologies are analyzed and discussed. A review of the most efficient rectenna designs, from the state of the art, is also presented. Design considerations for low power rectifier operations are detailed and new high efficient rectifying circuits are designed and evaluated in both GSM and ISM bands under low power constraints.

2014 ◽  
Vol 62 (4) ◽  
pp. 965-976 ◽  
Author(s):  
Simon Hemour ◽  
Yangping Zhao ◽  
Carlos Henrique Petzl Lorenz ◽  
Dimitri Houssameddine ◽  
Yongsheng Gui ◽  
...  

Author(s):  
Raphaella Luiza Resende da Silva ◽  
Sandro Trindade Mordente Gonçalves ◽  
Christian Vollaire ◽  
Arnaud Bréard ◽  
Gláucio Lopes Ramos ◽  
...  

2015 ◽  
Vol 33 (3) ◽  
pp. 357-359 ◽  
Author(s):  
Sennur Ulukus ◽  
Elza Erkip ◽  
Pulkit Grover ◽  
Kaibin Huang ◽  
Osvaldo Simeone ◽  
...  

Author(s):  
Eman M. Abdelhady ◽  
◽  
Hala M. Abdelkader ◽  
Amr A. Al-Awamry

This paper presents a novel simple adaptive and efficient rectifier for Radio Frequency (RF) energy harvesting applications. Traditional rectifiers have maximum RF-DC Power Conversion Efficiency (PCE) over a narrow range of RF input power due to diode breakdown voltage restrictions. The proposed adaptive design helps to extend the PCE over a wider range of RF input power at 2.45GHz using a simple design. Two alternative paths arecontrolled depending on the RF input power level. Low input power levels activate the first path connected to a single rectifier; low power levels make the diode operate below its breakdown voltage and therefore avoiding PCE degradation. High input power levels activate the second path dividing it into three rectifiers. This keeps input power at each rectifier at a low power level to avoid exceeding the diode break down voltage. Simulated PCE of this work is kept above 50% over a range of 21.4 dBm input power from -0.8dBm to 20.6dBm.


2021 ◽  
Vol 60 (SB) ◽  
pp. SBBH14
Author(s):  
Tsuyoshi Takahashi ◽  
Kenichi Kawaguchi ◽  
Masaru Sato ◽  
Michihiko Suhara ◽  
Naoya Okamoto

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