Scope of RF MEMS Technology for Microwave Circuits and Systems

2021 ◽  
pp. 1-22
Author(s):  
Kanthamani Sundharajan
Keyword(s):  
Rf Mems ◽  
Low Cost ◽  
Microwave Circuits ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Phased Array Antennas ◽  
Array Antennas ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Key Issues

Micro-electro mechanical systems (MEMS) technology has facilitated the need for innovative approaches in the design and development of miniaturized, effective, low-cost radio frequency (RF) microwave circuits and systems. This technology is expected to have significant role in today's 5G applications for the development of reconfigurable architectures. This chapter presents an overview of the evolution of MEMS-based subsystems and devices, especially switches and phased array antennas. This chapter also discusses the key issues in design and analysis of RF MEMS-based devices, particularly with primary emphasis on RF MEMS switches and antennas.

scholarly journals Laterally Movable Triple Electrodes Actuator toward Low Voltage and Fast Response RF-MEMS Switches

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 864 ◽  
Author(s):  
Yasuyuki Naito ◽  
Kunihiko Nakamura ◽  
Keisuke Uenishi
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Low Cost ◽  
Actuation Voltage ◽  
Fast Response ◽  
Point Of View ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Series Switch

A novel actuator toward a low voltage actuation and fast response in RF-MEMS (radio frequency micro-electro-mechanical systems) switches is reported in this paper. The switch is comprised of laterally movable triple electrodes, which are bistable by electrostatic forces applied for not only the on-state, but also the off-state. The bistable triple electrodes enable the implementation of capacitive series and shunt type switches on a single switch, which leads to high isolation in spite of the small gap between the electrodes on the series switch. These features of the actuator are effective for a low voltage and fast response actuation in both the on- and off-state. The structure was designed in RF from a mechanical point of view. The laterally movable electrodes were achieved using a simple, low-cost two-mask process with 2.0 µm thick sputtered aluminum. The characteristics of switching response time and actuation voltage were 5.0 µs and 9.0 V, respectively.

scholarly journals RF-MEMS switches with AlN dielectric and their applications

2011 ◽  
Vol 3 (5) ◽  
pp. 509-520 ◽  
Author(s):  
Montserrat Fernández-Bolaños Badía ◽  
Pierre Nicole ◽  
Adrian Mihai Ionescu
Keyword(s):  
Transmission Lines ◽  
Rf Mems ◽  
Beam Steering ◽  
Phase Shifters ◽  
Center Frequency ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Bandwidth Tuning ◽  
Rf Performance

This paper reports on the potential of RF-MEMS technology based on aluminum nitride capacitive dielectric and nickel-suspended membranes to provide RF circuit functions in reconfigurable front-end radios. The RF performance of capacitive switches, distributed MEMS transmission lines (DMTLs) phase shifters for beam steering and tunable filters, including center frequency and bandwidth tuning of bandpass and band-stop filters are presented. Detailed characterization based on S-parameter data demonstrates very promising figures of merit of all fabricated demonstrators from 5 to 40 GHz.

Micro/Nanotribology of RF MEMS Switches

2004 ◽  
Author(s):  
Steven T. Patton ◽  
Kalathil C. Eapen ◽  
Jeffrey S. Zabinski
Keyword(s):  
Electric Current ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Operating Conditions ◽  
Great Promise ◽  
Rf Switches ◽  
Mems Switches ◽  
Adhesion Contact ◽  
Rf Mems Switches

Microelectromechanical systems (MEMS) radio frequency (RF) switches hold great promise in a myriad of commercial, aerospace, and military applications. MEMS switches offer important advantages over current electromechanical and solid state technologies including high linearity, low insertion loss, low power consumption, good isolation, and low cost [1–21]. However, there is little fundamental understanding of the factors determining the performance and reliability of these devices. Our previous work investigated fundamentals of hot-switched direct current (DC) gold (Au) contacts using a modified microadhesion apparatus as a switch simulator [1]. Those experiments were conducted under precisely controlled operating conditions in air at MEMS-scale forces with an emphasis on the role of surface forces and electric current on switch performance, reliability, and durability [1]. Electric current had a profound effect on deformation mechanisms, adhesion, contact resistance (R), and reliability/durability. At low current (1–10 μA), asperity creep and switching induced adhesion were the most important observations, whereas, at high current (1–10 mA), lack of adhesion and switch shorting by nanowire formation were prominent [1].

Power Handling Capability Improvement of Metal-Contact RF MEMS Switches by Optimized Array Configuration Design of Contact Dimples

2014 ◽  
Vol 609-610 ◽  
pp. 1417-1421
Author(s):  
Chen Xu Zhao ◽  
Xin Guo ◽  
Tao Deng ◽  
Ling Li ◽  
Ze Wen Liu
Keyword(s):  
Rf Mems ◽  
Contact Point ◽  
Metal Contact ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Array Configuration ◽  
Power Handling ◽  
Novel Approach ◽  
Rf Mems Switches ◽  
Power Handling Capability

This paper presents a novel approach to enhancing power-handling capability of metal-contact radio-frequency micro-electro-mechanical systems (RF MEMS) switches based on an Optimized Array Configured (OAC) contact dimples design. The simulation results reveal that this strategy can distribute the RF current more uniformly through each contact of the switch than traditional multiple parallel-configured contacts design, thus leading to a more effective reduction of current through each contact. Therefore, probability of micromelding and adhesion at metal contact point owing to localized high current induced Joule heating, which limits the power handling capability of the metal-contact RF MEMS switch, can be effectively reduced by the proposed approach. Comparing with previously fabricated switch, power-handling capability of the switch with OAC contact dimples can be dramatically improved over 390%.

Quantification of Uncertainty in Creep Failure in RF-MEMS Switches

2012 ◽  
Author(s):  
Peter A. Kolis ◽  
Marisol Koslowski ◽  
Anil K. Bajaj
Keyword(s):  
Rf Mems ◽  
Beam Model ◽  
Creep Failure ◽  
Micro Electro Mechanical Systems ◽  
Modal Expansion ◽  
Mems Switches ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Rf Mems Switches

We present simulations of the dynamic response of radio frequency micro-electro-mechanical-systems (RF-MEMS) switches undergoing creep deformation. The model includes a microscale-informed Coble creep formulation incorporated in a beam model of an electrostatically actuated RF-MEMS switch, and it is solved using a Ritz-Galerkin based modal expansion. The resulting effects on the long-term device behavior as well as the implications of uncertainty in the device geometry and material parameters are studied. We find that the addition of creep to the beam model results in an undesired degradation of the device performance, as evidenced by decreases in the closing and release voltages.

Photodefinable Metal Oxide Dielectrics II: Direct Fabrication of Patterned High-k Dielectrics for Low Cost RF Capacitive MEMS Switches

2004 ◽  
Vol 833 ◽  
Author(s):  
Michael Romeo ◽  
Isaac Finger ◽  
Augustin Jeyakumar ◽  
Guoan Wang ◽  
John Papapolymerou ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Oxygen Plasma ◽  
Rf Mems ◽  
Dielectric Breakdown ◽  
Low Cost ◽  
Dielectric Constants ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Metal Organic

ABSTRACTIn this paper, recent advancements related to a novel approach for fabricating low cost capacitive radio frequency microelectromechanical (RF MEMS) switches using directly photodefinable high dielectric constant metal oxides are discussed. In this approach, a radiation sensitive metal-organic precursor is deposited via spin coating and converted patternwise to a metal oxide using exposure to ultraviolet light. The feasibility of this approach has previously been demonstrated by fabricating bridge-type and cantilever-type RF MEMS switches. These early experiments showed that the photopatterned oxides displayed dielectric breakdown strengths that were insufficient for reliable operation of MEMS switches which required actuation voltages on the order of 20 V to 30 V. Recent work has focused on developing advanced processes based on the photodefinable metal-organic approach that can produce oxides with higher dielectric breakdown strengths and higher dielectric constants. A variety of post-patterning processes, including thermal baking and oxygen plasma annealing, were investigated and the impact of such processing on the resulting dielectric properties are discussed in this paper. It is shown that a combination of thermal annealing and oxygen plasma treatment can substantially improve the dielectric breakdown strength of the metal oxides produced using the photosensitive metal-organic process.

Low cost RF MEMS switches using photodefinable mixed oxide dielectrics

2003 ◽  
Author(s):  
Guoan Wang ◽  
S. Barstow ◽  
A. Jeyakumar ◽  
J. Papapolymerou ◽  
C. Henderson
Keyword(s):  
Mixed Oxide ◽  
Rf Mems ◽  
Low Cost ◽  
Mems Switches ◽  
Rf Mems Switches

Development of different K-band MEMS phase shifter designs for satellite COTM terminals

2010 ◽  
Vol 2 (3-4) ◽  
pp. 263-271 ◽  
Author(s):  
P. Farinelli ◽  
S. Bastioli ◽  
E. Chiuppesi ◽  
F. Di Maggio ◽  
B. Margesin ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Phased Array ◽  
Rf Mems ◽  
Low Cost ◽  
Phase Shifters ◽  
High Resistivity ◽  
Phased Array Antennas ◽  
Array Antennas ◽  
Rf Performance ◽  
K Band

This work presents the design, manufacturing, and testing of three 5-bit K-band Micro-Electro-Mechanical-Systems (MEMS) phase shifters based on similar architectures (combination of switched line and loaded line) but employing different MEMS switch typologies (cantilevers and air bridges) and RF junctions (SP2T and SP4T). All devices have been monolithically manufactured on 200 µm thick high resistivity silicon substrate (4″) by using the Fondazione Bruno Kessler (FBK) RF MEMS process. The performance of the different devices has been compared in order to identify the best configuration to be implemented in electronically steerable phased array antennas for satellite COTM (communication on the move) terminals. Excellent performances were measured for the dielectric-free pad RF MEMS switches as well as the single bits constituting the phase shifter. The three 5-bit devices show return losses better than 15 dB for all states, with average insertion loss of 3.5 dB for the clamped–clamped, SP2T-based design, 2.2 dB for the cantilever, SP2T-based device and 2.1 dB for the cantilever, SP4 T-based design. A low-cost Surface Mountable Technology (SMT) one-level package has been developed as well to allow the phase shifter integration into phased array antennas by using automatic surface mounting techniques. The design and simulation of the SMT package are also presented together with its measured RF performance.

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