Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
pp. 1449-1452
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Power Switching ◽  
Design Considerations ◽  
Switching Devices

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

Ultra high voltage MOS controlled 4H-SiC power switching devices

2015 ◽  
Vol 30 (8) ◽  
pp. 084001 ◽  
Author(s):  
S Ryu ◽  
C Capell ◽  
E Van Brunt ◽  
C Jonas ◽  
M O’Loughlin ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Switching ◽  
Switching Devices ◽  
Ultra High Voltage

Progress in High Voltage SiC and GaN Power Switching Devices

2014 ◽  
Vol 778-780 ◽  
pp. 1077-1082 ◽  
Author(s):  
T. Paul Chow
Keyword(s):  
Power Electronics ◽  
High Voltage ◽  
Present Status ◽  
Future Trend ◽  
Power Devices ◽  
Power Switching ◽  
Switching Devices

The present status of the development and commercialization of SiC and GaN power devices for power electronics applications is presented. The technology obstacles and needs as well as future trend in these power devices are also discussed.

Industrial Gas Turbine Exciters: Design Considerations for More Effective Products

2003 ◽  
Author(s):  
Luigi Tozzi ◽  
Dave Petruska ◽  
John Emergy
Keyword(s):  
Solid State ◽  
Gas Turbine ◽  
Gas Turbines ◽  
Digital Systems ◽  
Power Switching ◽  
Design Considerations ◽  
Industrial Gas Turbines ◽  
Analog Systems ◽  
Industrial Gas Turbine ◽  
Switching Devices

Ignition systems for industrial gas turbines, in use for decades, continue to evolve with improving technology. A recent development is the use of microprocessors and solid-state semiconductor power switching devices (digital systems). Extensive testing of digital systems has demonstrated excellent ignitability, reliability, and plug life compared to traditional analog systems. Furthermore, digital systems demonstrate a potential for combustion feedback.

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs

2008 ◽  
Vol 600-603 ◽  
pp. 1191-1194 ◽  
Author(s):  
Yang Sui ◽  
James A. Cooper ◽  
X. Wang ◽  
Ginger G. Walden
Keyword(s):  
High Voltage ◽  
Room Temperature ◽  
Next Generation ◽  
Power Switching ◽  
Drift Layer ◽  
The Ideal ◽  
Switching Devices

We have designed, simulated, fabricated, and characterized high-voltage 4H-SiC p-channel DMOS-IGBTs on 20 kV blocking layers for use as the next generation of power switching devices. These p-IGBTs exhibit significant conductivity modulation in the drift layer. The maximum currents of the experimental p-channel IGBTs are 1.2x and 2.1x higher than the ideal 20 kV n-channel DMOSFETs at room temperature and 175°C, respectively.

DESIGN CONSIDERATIONS OF HIGH VOLTAGE BATTERY PACKS FOR ELECTRIC BUSES

2017 ◽  
Author(s):  
MEHMET UĞRAŞ CUMA ◽  
EMRAH YİRİK ◽  
ÇAĞLA DERİCİOĞLU ◽  
ERDEM ÜNAL ◽  
BURAK ONUR ◽  
...  
Keyword(s):  
High Voltage ◽  
Design Considerations ◽  
Battery Packs ◽  
High Voltage Battery
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