Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)

2006 ◽  
pp. 799-802
Author(s):  
Masataka Satoh ◽  
Tomoyuki Suzuki
Keyword(s):  
Concentration Dependence ◽  
Impurity Concentration ◽  
Recrystallization Process

Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)

2006 ◽  
Vol 527-529 ◽  
pp. 799-802
Author(s):  
Masataka Satoh ◽  
Tomoyuki Suzuki
Keyword(s):  
Ion Implantation ◽  
Concentration Dependence ◽  
Impurity Concentration ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Phosphorus Concentration ◽  
Recrystallization Process ◽  
Substitutional Impurity ◽  
P Concentration

The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 660 to 720 oC . The phosphorus ions were multiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorus concentration of 1 x 1020, 4 x 1020, or 1 x 1021 /cm3, respectively. The recrystallization rate of the P ion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of 3.4 eV as does the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and (1-100). As the P concentration is increased from 1 x 1020 to 1 x 1021 /cm3, the recrystallization rate is enhanced from 3.5 to about 5nm/min, while the recrystallization rate for the Ar implantationinduced amorphous layer was 1.5 nm/min. It is suggested that the recrystallization process is enhanced by the presence of the substitutional impurity at the amorphous-crystalline interface during the recrystallization.

An Analytical Model for Field-Enhanced Diffusion of Ionized Impurities in Highly Doped Si

2000 ◽  
Vol 610 ◽  
Author(s):  
Bogdan S. Sokolovskii ◽  
Liubomyr S. Monastyrskii ◽  
Roman M. Kovtun
Keyword(s):  
Diffusion Coefficient ◽  
Band Structure ◽  
Band Gap ◽  
Concentration Dependence ◽  
Analytical Model ◽  
Impurity Concentration ◽  
Carrier Density ◽  
Enhanced Diffusion ◽  
Band Gap Narrowing ◽  
Increasing Function

AbstractAn expression for concentration dependence of diffusion coefficient of ionized impurity in semiconductors which is derived which is valid for the whole range of carrier degeneracy under the condition that the impurity concentration greatly exceeds the intrinsic carrier density. Due to reduction of impurity field screening by mobile carriers at degenerate conditions the diffusion coefficient is shown to be a monotonously increasing function of impurity concentration. It is proved that taking band gap narrowing into account results in a reduction of the diffusion coefficient in comparison with the case of unperturbed band structure. In addition, a decreasing concentration dependence of the diffusion coefficient can be realized at relatively low impurity concentrations.

IMPURITY CONCENTRATION DEPENDENCE OF RAMAN-SCATTERING BY MAGNONS IN Ni DOPED RbMnF3 AND KMnF3

1971 ◽  
Vol 32 (C1) ◽  
pp. C1-803-C1-805
Author(s):  
G. PARISOT ◽  
R. E. DIETZ ◽  
H. J. GUGGENHEIM ◽  
P. MOCH ◽  
C. DUGAUTIER
Keyword(s):  
Raman Scattering ◽  
Concentration Dependence ◽  
Impurity Concentration
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