The Ground States of the FCC Alloy Films

2005 ◽  
pp. 3189-3196
Author(s):  
Yan Lin Xu ◽  
Jun Ni ◽  
Shuichi Iwata
Keyword(s):  
2005 ◽  
Vol 475-479 ◽  
pp. 3189-3196 ◽  
Author(s):  
Yan Lin Xu ◽  
Jun Ni ◽  
Shuichi Iwata

We have investigated the ground states of the fcc alloy films in the (001) direction using the Monte-Carlo simulation. The surface field is introduced to describe the surface effects such as surface segregation. The variation of the ground states as a function of the film layer number is determined. The ground states for the films with even layer numbers and odd layer numbers show different variation tendency as the layer number increases. The phase diagrams of the ground states are obtained.


2006 ◽  
Vol 373 (2) ◽  
pp. 198-205
Author(s):  
Jiangling Pan ◽  
Yanlin Xu ◽  
Jun Ni
Keyword(s):  

2020 ◽  
Vol 193 ◽  
pp. 108802 ◽  
Author(s):  
Rachel Schoeppner ◽  
Calum Ferguson ◽  
Laszlo Pethö ◽  
Carlos Guerra-Nuñez ◽  
Aidan A. Taylor ◽  
...  

1994 ◽  
Vol 343 ◽  
Author(s):  
A. Carl ◽  
D. Weller ◽  
R. Savoy ◽  
B. Hillebrands

ABSTRACTWe have studied 100nm thick electron beam evaporated Co1-xNix alloy films in the composition range 0 ≤ x ≥ 1 using magneto-optical spectroscopy and magnetic anisotropy measurements. For films with x ≈ 0.2 we have also investigated the dependence of these quantities on the growth temperature, which was varied in the range 27 ≤ TG ≥ 408°C. Both as function of the Ni content x and the growth temperature TG we observe the anticipated hcp → fcc phase transition, e.g. by monitoring the magneto-crystalline anisotropy constant Ku, 1, which changes continuously from values of ≈ 0.3MJ/m3 for Co rich hcp alloys (0 ≤ x ≥ 0.25) to ≈ -0.05MJ/m3 for Ni rich fcc alloy films, in good agreement with bulk literature data. The new and most striking result, however, is observed in the polar magneto-optical Kerr and ellipticity spectra, which were measured in the photon energy range 0.8 ≤ hv ≥ 5.5eV. Changes by up to about 40% in Kerr rotation for films of constant composition and magnetization are observed when the structure changes from hcp → fcc. This demonstrates the sensitivity of magneto-optical effects to structural changes, making Kerr spectroscopy a useful electronic and physical structure probe.


2002 ◽  
Vol 715 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai

AbstractThe morphological and compositional instabilities in the heteroepitaxial strained alloy films have attracted intense interest from both experimentalists and theorists. To understand the mechanisms and properties for the generation of instabilities, we have developed a nonequilibrium, continuum model for the dislocation-free and coherent film systems. The early evolution processes of surface pro.les for both growing and postdeposition (non-growing) thin alloy films are studied through a linear stability analysis. We consider the coupling between top surface of the film and the underlying bulk, as well as the combination and interplay of different elastic effects. These e.ects are caused by filmsubstrate lattice misfit, composition dependence of film lattice constant (compositional stress), and composition dependence of both Young's and shear elastic moduli. The interplay of these factors as well as the growth temperature and deposition rate leads to rich and complicated stability results. For both the growing.lm and non-growing alloy free surface, we determine the stability conditions and diagrams for the system. These show the joint stability or instability for film morphology and compositional pro.les, as well as the asymmetry between tensile and compressive layers. The kinetic critical thickness for the onset of instability during.lm growth is also calculated, and its scaling behavior with respect to misfit strain and deposition rate determined. Our results have implications for real alloy growth systems such as SiGe and InGaAs, which agree with qualitative trends seen in recent experimental observations.


2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.


2018 ◽  
Vol 2018 (3) ◽  
pp. 147-155
Author(s):  
M.M. Rakhmatullaev ◽  
M.A. Rasulova

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