Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
2005 ◽
pp. 519-522
2005 ◽
Vol 483-485
◽
pp. 519-522
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2007 ◽
Vol 556-557
◽
pp. 439-444
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Keyword(s):
2009 ◽
Vol 156-158
◽
pp. 155-160
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1992 ◽
Vol 50
(2)
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pp. 1396-1397
Keyword(s):
2019 ◽
Vol 47
(5)
◽
pp. 1247-1257
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Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1228-1231
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1223-1227
Keyword(s):