Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

AbstractSemi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.

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Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.9 ◽

2005 ◽

Vol 483-485 ◽

pp. 9-12 ◽

Cited By ~ 2

Author(s):

Thomas Anderson ◽

Donovan L. Barrett ◽

J. Chen ◽

Ejiro Emorhokpor ◽

A. Gupta ◽

...

Keyword(s):

Electrical Resistivity ◽

Electrical Properties ◽

Low Temperature ◽

Nitrogen Doping ◽

Large Diameter ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Insulating Properties ◽

Low Temperature Photoluminescence

Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

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Bulk Growth of Large Area SiC Crystals

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.5 ◽

2016 ◽

Vol 858 ◽

pp. 5-10 ◽

Cited By ~ 22

Author(s):

Adrian R. Powell ◽

Joseph J. Sumakeris ◽

Yuri Khlebnikov ◽

Michael J. Paisley ◽

R.T. Leonard ◽

...

Keyword(s):

Silicon Carbide ◽

Dislocation Density ◽

Epitaxial Growth ◽

Substrate Surface ◽

Large Diameter ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Large Area ◽

Substrate Quality ◽

Bulk Growth

The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

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Interaction of surface radiation with convection in crystal growth by physical vapor transport

10.2514/6.1989-228 ◽

1989 ◽

Author(s):

MOHAMMAD KASSEMI ◽

WALTER DUVAL

Keyword(s):

Crystal Growth ◽

Vapor Transport ◽

Surface Radiation ◽

Physical Vapor Transport

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Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

10.21236/ada600386 ◽

2014 ◽

Author(s):

Jeffrey J. Swab ◽

James W. McCauley ◽

Brady Butler ◽

Daniel Snoha ◽

Donovan Harris ◽

...

Keyword(s):

Single Crystals ◽

Knoop Hardness ◽

Vapor Transport ◽

Physical Vapor Transport

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High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

Functional Materials Letters ◽

10.1142/s1793604719500322 ◽

2019 ◽

Vol 12 (03) ◽

pp. 1950032 ◽

Cited By ~ 2

Author(s):

Yuchen Deng ◽

Yaming Zhang ◽

Nanlong Zhang ◽

Qiang Zhi ◽

Bo Wang ◽

...

Keyword(s):

Thermal Conductivity ◽

Silicon Carbide ◽

Grain Size ◽

Phase Composition ◽

Room Temperature ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Growth Substrate ◽

Sic Ceramics ◽

Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

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