Effect of Fe Addition on Ordering Kinetics in Ni3Al1-xFex System. Monte Carlo Simulation

2007 ◽  
pp. 93-98
Author(s):  
E. Partyka ◽  
Rafał Kozubski
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Ordering Kinetics ◽  
Fe Addition

Effect of Fe Addition on Ordering Kinetics in Ni3Al1-xFex System. Monte Carlo Simulation

2007 ◽  
Vol 263 ◽  
pp. 93-98 ◽  
Author(s):  
E. Partyka ◽  
Rafal Abdank-Kozubski
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Model System ◽  
Chemical Ordering ◽  
Ordering Kinetics ◽  
Ternary Element ◽  
Antisite Defects ◽  
Kinetics Of ◽  
Fe Addition

The influence of Fe admixture on ordering kinetics in Ni3Al1-xFex was studied by running Monte Carlo simulations in a model system A3B1-xCx showing similarly to Ni3Al1-xFex destabilization of the ordered phase when admixing a ternary element C. Detailed analysis of atomic jump statistics revealed a dominance of the C-atom jumps in the creation/elimination of antisite defects as well as in the migration of antisites within majority sublattice. The results elucidate the role of Fe alloying in the kinetics of chemical ordering in Ni3Al.

L10-ordering kinetics in FePt nano-layers: Monte Carlo simulation

2005 ◽  
Vol 33 (1-3) ◽  
pp. 287-295 ◽  
Author(s):  
M. Kozłowski ◽  
R. Kozubski ◽  
V. Pierron-Bohnes ◽  
W. Pfeiler
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Ordering Kinetics

Effect of the Intercalation of the Carbon Layer on the Kinetics of Grain Growth of FePt Magnetic Thin Film during Ordering Reaction - A Monte Carlo Simulation Study

2007 ◽  
Vol 558-559 ◽  
pp. 1237-1242
Author(s):  
M.C. Kim ◽  
D.A. Kim ◽  
Joong Kuen Park
Keyword(s):  
Thin Film ◽  
Monte Carlo Simulation ◽  
Grain Size ◽  
Monte Carlo ◽  
Grain Growth ◽  
Carbon Layer ◽  
Carbon Addition ◽  
Monte Carlo Simulation Study ◽  
Ordering Kinetics ◽  
Kinetics Of

The effect of carbon addition on the grain growth and ordering kinetics of FePt film has been experimentally studied by sputter-depositing a monolithic FePt-20at.%C film of 24 nm. Carbon addition of 20at.% to FePt thin film in a form of FePt (20 nm)/Cn (4 nm) (n = 1, 4) significantly reduced both the grain growth and ordering kinetics. Reducing the thickness of carbon layer, i.e. from n = 1 to n = 4, led to a much finer grain size distribution as well as to a finer grain size. The Monte Carlo simulation study indicated that the decrease of grain growth and ordering kinetics is primarily due to a continuous decrease of the mobility of order – disorder inter-phase with the progress of ordering reaction. This can eventually lead to a stable 2-phase grain structure inter-locked by low mobility inter-phases and is responsible for the formation of a fine grain size distribution in the FePt/Cn film with n = 4.

ORDERING KINETICS BY VACANCIES

1993 ◽  
Vol 04 (03) ◽  
pp. 701-720 ◽  
Author(s):  
EDUARD VIVES ◽  
ANTONI PLANES
Keyword(s):  
Phase Transition ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
State Of The Art ◽  
Growth Dynamics ◽  
Domain Growth ◽  
Disorder Phase Transition ◽  
Ordering Kinetics ◽  
Simulation Results ◽  
Domain Growth Dynamics

Domain growth dynamics in binary alloys undergoing an order-disorder phase transition is revised. After a summary of the state-of-the-art of the problem, we focus on the Monte Carlo simulation results. The usual atom-exchange dynamics is compared with a more realistic vacancy driven dynamics. Results suggest that the expected Allen-Cahn growth law might be modified by this more realistic dynamics.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Sign in / Sign up

Export Citation Format

Share Document