Simulation on Parameters Temperature Field by Gas-Solid Coupling in Goaf

2012 ◽  
Vol 229-231 ◽  
pp. 1815-1818
Author(s):  
Yue Hong Wang ◽  
Yue Ping Qin ◽  
Jiu Ling Zhang ◽  
Jia Li Wen

For solution the complex and rapidly changing question of temperature field in mining goaf, the simulation on dynamic temperature field of parameters coupling is carried out under different working coditions based on high-efficiency finite volume method (FVM) and the moving characteristic of working face. The theory analysis, the laboratory experiment, the simulation of software and the example confirmation, above all methods are used in order to find the change of temperature field in goaf. The result is found that there has spontaneous combustion in goaf when the moving speed of working face is below 1.2m/d; besides that the temperature in goaf fall and the high-temperature region is extend to the deep of goaf. Another result is exist that there has the linear increase relationship of the intensity of leak air and the temperature in goaf, and the high-temperature region is extend to the deep of goaf contrary to the effect of the coal oxidation properties, which increases the risk of coal spontaneous combustion in goaf. Especially , all the data of temperature is visualization by picture of 3D, so the distribution map of temperature in goaf is visualized distinctly. The research results provide a theoretical basis for understanding the real situation and preventing spontaneous combustion in goaf.

1976 ◽  
Vol 15 (9) ◽  
pp. 1813-1814 ◽  
Author(s):  
Masayuki Nagao ◽  
Goro Sawa ◽  
Masahiko Fukui ◽  
Masayuki Ieda

RSC Advances ◽  
2018 ◽  
Vol 8 (13) ◽  
pp. 6931-6939 ◽  
Author(s):  
Tingting Sui ◽  
Yafei Lian ◽  
Mingxia Xu ◽  
Lisong Zhang ◽  
Yanlu Li ◽  
...  

Hybrid DFT calculations with vdW correction well explain the defect-induced conductivity break of ADP in the high-temperature region.


2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.


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