Radionuclide of Process of Carbon Decomposition and Anneal of Liquor after Desilication from Nepheline

2013 ◽  
Vol 330 ◽  
pp. 22-26
Author(s):  
Yong Jia LI ◽  
Ting Lei ◽  
Da Jin Yang
Keyword(s):  
Crystal Growth ◽  
Radioactive Contamination ◽  
Decomposition Rate ◽  
Aluminium Oxide ◽  
Sodium Aluminate ◽  
Mother Solution ◽  
Carbon Decomposition ◽  
Great Mass

Carbon decomposition of liquor afger desilication from nephine was investigated, aluminium oxide was prepard by anneal of Al (OH)3 separated out from carbon decompositon, and analysis of radionuclide of both above process was performed. The results show decomposition rate of sodium aluminate can be obtained when experiments of carbon decomposition of liquor after desilication using CO2 of hight concentration, and it is beneifit for the crystal growth of Al (OH)3, filtration and separation. Great mass of nuclide exists in the mother solution of carbon decomposition, and few into Al (OH)3, which could be regarded as wiout radioactive contamination. .

Evolution of the ?13C signature related to total carbon contents and carbon decomposition rate constants in a soil profile under grassland

2002 ◽  
Vol 16 (23) ◽  
pp. 2184-2189 ◽  
Author(s):  
Frederik Accoe ◽  
Pascal Boeckx ◽  
Oswald Van Cleemput ◽  
Georges Hofman ◽  
Ying Zhang ◽  
...  
Keyword(s):  
Decomposition Rate ◽  
Rate Constants ◽  
Soil Profile ◽  
Total Carbon ◽  
Carbon Decomposition

Effect of Crystal Growth Modifier on the Structure of Sodium Aluminate Liquors Analyzed by Raman Spectroscopy

2012 ◽  
pp. 125-128
Author(s):  
Jianguo Yin ◽  
Wangxing Li ◽  
Zhanwei Liu ◽  
Zhaohui Su ◽  
Zhonglin Yin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Growth ◽  
Sodium Aluminate ◽  
Growth Modifier

Effects of Seeding on Large Crystal Growth of NaX Zeolite by Continuous Crystallisation

2007 ◽  
Vol 280-283 ◽  
pp. 861-864
Author(s):  
Ik Jin Kim ◽  
Hae Jin Lee ◽  
Panagiotis Tsiakaras
Keyword(s):  
Crystal Growth ◽  
Crystal Size ◽  
Continuous Method ◽  
Mother Solution ◽  
Zeolite X ◽  
Large Crystal ◽  
Continuous Crystallization ◽  
Starting Solution ◽  
Crystallization Method ◽  
Seed Content

The problem with zeolite crystals synthesized by conventional method is that they are extremely small of two to eight microns, To better define the structure of zeolite, scientist need to grow crystal that are 100 to 1000 times larger. In this work, Large crystal zeolite X of uniform crystal size of 50µm were grown by a continuous crystallization method from seed crystals (5-10µm) in a mother solution having a composition 3.5Na2O : Al2O3 : 2.1SiO2 : 1000H2O. In order to grow crystals of zeolite X to an appropriate size by the continuous method, the mother solution was supplied into the starting solution with various seed content (3~20wt%) in an autoclave at 90°C after 7 days, 12days, 16days, 19days and 24 days, respectively.

Effect of Crystal Growth Modifier on the Structure of Sodium Aluminate Liquors Analyzed by Raman Spectroscopy

2012 ◽  
pp. 125-128
Author(s):  
Jianguo Yin ◽  
Wangxing Li ◽  
Zhanwei Liu ◽  
Zhaohui Su ◽  
Zhonglin Yin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Growth ◽  
Sodium Aluminate ◽  
Growth Modifier

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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