Interaction Relationship Analysis of Surface Roughness on Aluminium Etched Wafer Using RIE

2014 ◽  
Vol 487 ◽  
pp. 214-217
Author(s):  
Zaliman Sauli ◽  
Vithyacharan Retnasamy ◽  
Aaron Koay Terr Yeow ◽  
Ng Wei Wei

This paper presents the interaction relationships between Tetrafluoromethane (CF4) gas, Oxygen (O2) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CF4 and RF power, CF4 and O2, and also O2 and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE.

2005 ◽  
Vol 483-485 ◽  
pp. 765-768 ◽  
Author(s):  
Jun Hai Xia ◽  
E. Rusli ◽  
R. Gopalakrishnan ◽  
S.F. Choy ◽  
Chin Che Tin ◽  
...  

Reactive ion etching of SiC induced surface damage, e.g., micromasking effect induced coarse and textured surface, is one of the main concerns in the fabrication of SiC based power devices [1]. Based on CHF3 + O2 plasma, 4H-SiC was etched under a wide range of RF power. Extreme coarse and textured etched surfaces were observed under certain etching conditions. A super-linear relationship was found between the surface roughness and RF power when the latter was varied from 40 to 160 W. A further increase in the RF power to 200 W caused the surface roughness to drop abruptly from its maximum value of 182.4 nm to its minimum value of 1.3 nm. Auger electron spectroscopy (AES) results revealed that besides the Al micromasking effect, the carbon residue that formed a carbon-rich layer, could also play a significant role in affecting the surface roughness. Based on the AES results, an alternative explanation on the origin of the coarse surface is proposed.


2019 ◽  
Vol 61 (7-8) ◽  
pp. 511-516
Author(s):  
Gil-Yong Yeom ◽  
G. Eisaabadi B. ◽  
Shae K. Kim ◽  
Soong-Keun Hyun ◽  
Kyeong Suk Sim ◽  
...  

2012 ◽  
Vol 64 (8) ◽  
pp. 590-597 ◽  
Author(s):  
Felycia Edi Soetaredjo ◽  
Suryadi Ismadji ◽  
Lien Huong Huynh ◽  
Novy S. Kasim ◽  
Ngoc Yen Tran-Thi ◽  
...  

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