On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes

2014 ◽  
Vol 1016 ◽  
pp. 521-525 ◽  
Author(s):  
V.V. Shurenkov
Keyword(s):  
Microwave Radiation ◽  
Main Part ◽  
Physical Mechanism ◽  
Semiconductor Devices ◽  
Microwave Devices ◽  
Electronic Systems ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Power Microwave ◽  
Forbidden Gap

The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.

scholarly journals Electron-phonon decoupling in two dimensions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
George McArdle ◽  
Igor V. Lerner
Keyword(s):  
Electron Temperature ◽  
Cooling Rate ◽  
Two Dimensions ◽  
Electronic Systems ◽  
Two Dimensional ◽  
Many Body ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractIn order to observe many-body localisation in electronic systems, decoupling from the lattice phonons is required, which is possible only in out-of-equilibrium systems. We show that such an electron-phonon decoupling may happen in suspended films and it manifests itself via a bistability in the electron temperature. By studying the electron-phonon cooling rate in disordered, suspended films with two-dimensional phonons, we derive the conditions needed for such a bistability, which can be observed experimentally through hysteretic jumps of several orders of magnitude in the nonlinear current-voltage characteristics. We demonstrate that such a regime is achievable in systems with an Arrhenius form of the equilibrium conductivity, while practically unreachable in materials with Mott or Efros–Shklovskii hopping.

Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Nigam ◽  
R. Degraeve ◽  
G. Groeseneken ◽  
M. Heyns ◽  
H.E. Maes
Keyword(s):  
Temperature Dependence ◽  
Measurement Technique ◽  
Quantum Tunneling ◽  
Physical Mechanism ◽  
Oxide Thickness ◽  
Tunneling Model ◽  
Conducting Path ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Soft Breakdown

ABSTRACTFor sub-5 nm oxides there are two different stages for breakdown; soft breakdown (SBD) and hard breakdown (HBD). It has been shown that both SBD and HBD exhibit the same statistics. Therefore, the physical mechanism governing them is the same. The major difference between them is the energy transferred from the capacitor to the localized conducting path. In this paper, a simple equivalent circuit is proposed to explain the effect of the measurement technique, oxide thickness, and test structure area on the detection of soft breakdown. Also an inelastic quantum tunneling model is proposed to discuss the current-voltage characteristics after SBD. The model is also successful in explaining the temperature dependence of SBD IV characteristics.

scholarly journals Аномальные характеристики ионной эмиссии при разрыве полимеров

2021 ◽  
Vol 47 (2) ◽  
pp. 41
Author(s):  
В.А. Пахотин ◽  
Ю.М. Бойко
Keyword(s):  
Polyethylene Terephthalate ◽  
Physical Mechanism ◽  
High Vacuum ◽  
Negative Ions ◽  
Negative Ion ◽  
Positive Ions ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resonance Character ◽  
Ion Emission

Measurements of the current-voltage characteristics of ion emission during the rupture of film samples of polyethylene terephthalate, polyimide, and polyphenylene ether in high vacuum have been carried out. Positive ions begin to be detected at a pulling potential of 100–200 V, and their number monotonically increases to saturation with increasing potential. Emission of negative ions is observed at a potential of << 200 V and in the range of 0–50 V has a resonance character, and the position of the resonance peaks is determined by the nature of the polymer. The discovered resonant nature of negative ion emission corresponds to the proposed physical mechanism of ion formation

Optimum current‐voltage characteristics of GaAs/AlAs intraband microwave devices

2015 ◽  
Vol 10 (9) ◽  
pp. 472-475 ◽  
Author(s):  
Chih Chin Yang ◽  
Yan Kuin Su ◽  
Ting Chang Chang
Keyword(s):  
Microwave Devices ◽  
Current Voltage ◽  
Current Voltage Characteristics
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