scholarly journals Potentiostat Electro-Deposited Cuprous Oxide and Cupric Oxide Thin Films for Photovoltaic Use

Author(s):  
T. P. Plateau ◽  
M. T. Islam ◽  
N. Islam``

To withstand the rising demand for energy while fuel and chemical energy are becoming rare, the development in the production of solar energy has become a necessity. There is a variety of solar cells; among them, thin-film photovoltaics is more popular because of low-cost production and good-efficiency. Nowadays, copper oxide has become popular to make thin film layers like CZTS, CIGS, etc. Unfortunately, the efficiency of these thin films is less than 20%. In order to obtain better efficacy, an investigation of the layers of thin films is needed. This research discussed the properties of copper and its oxides. In case of making the thin film layers, potentiostat electro-deposition was the chosen method where bath composition of CuSO4.5H2O solution, temperature, time, potential difference were the variable parameters. The best-deposited layers were obtained in 0.2 M concentration, 40 minutes, -0.5 V potential difference and 65oC. Hence, physical properties like thickness and hardness, and characterisation properties like X-ray diffractometry (XRD), scanning electron microscopy (SEM), UV-Vis spectrometry are observed to compare cupric oxide (CuO) and cuprous oxide (Cu2O) thin films. CuO thin film shows better stability and rigidity than the Cu2O thin film. But the thin film layer of cuprous oxide illustrates good homogeneity and nodular form. From the test mentioned above data, band gap has been measured for each deposited film, and the CuO thin film layer is raked out having a better band energy gap than the Cu2O thin film layer.

2015 ◽  
Vol 1110 ◽  
pp. 211-217
Author(s):  
Jin Woo Lee ◽  
Yun Hae Kim ◽  
Chang Wook Park

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.


1991 ◽  
Vol 243 ◽  
Author(s):  
Toshio Ogawa ◽  
Satoshi Shindou ◽  
Atsuo Senda ◽  
Tohru Kasanami

AbstractLanthanum-modified lead-titanate (Pbo.85Lao.1Ti03) thin films were fabricated by rf magnetron sputtering on various kinds of substrates such as single-crystal MgO (100), r-plane sapphire and SI (100) with an MgO thin film layer. All the films were able to be evaluated using nickel alloy electrodes which possess low reactivity with PbO, excellent heat-resistance and oxidation-resistance. The quality of these films was affected by the kind of substrate and crystal orientation of nickel alloy electrode used. Furthermore, by controlling the crystal orientation of the alloy electrode, films on Si (100) with an MgO (100) layer showed good ferroelectricity.


2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.


Author(s):  
Jianwen Liu ◽  
Wangping Wu ◽  
Xiang Wang

Developing novel hydrogen evolution reaction (HER) catalysts with high activity, high stability and low cost is of great importance for the applications of hydrogen energy. In this work, iridium-nickel (Ir-Ni) thin films were electrodeposited on a copper foam as electrocatalyst for HER, and electrodeposition mechanism of Ir-Ni film was studied. The morphology and chemical composition of thin films were determined by scanning electron microscopy and energy-dispersive spectroscopy, respectively. The electrocatalytic performances of the films were estimated by linear sweep voltammograms, electrochemical impedance spectroscopy and cyclic voltammetry. The results show that Ir-Ni thin films were attached to the substrate of porous structure and hollow topography. The deposition of Ni was preferable in the electrolyte without the addition of additives, and Ir-Ni thin film was alloyed, resulting in high deposition rate for Ir42Ni58 thin film, and subsequently an increase of Ir content in the thin films of Ir80Ni20 and Ir88Ni12. Ir-Ni thin films with Tafel slopes of 40-49 mV·dec-1 exhibited highly efficient electrocatalytic activity for HER. The electrocatalytic activity of Ir-Ni thin films showed a loading dependence. As the solution temperature raised from 20 oC to 60 oC, the hydrogen evolution performance of Ir-Ni thin films improved. The apparent activation energy value of Ir88Ni12 film was 7.1 kJ·mol-1. Long-term hydrogen evolution tests exhibited excellent electrocatalystic stability in alkaline solution.


2019 ◽  
Vol 33 (4) ◽  
pp. 195-206 ◽  
Author(s):  
Monali Joshi ◽  
Song Jun Hu ◽  
Mark S. Goorsky

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