GeCu/Si Bilayer Thin Film for Write-Once Blue Laser Optical Recording Media

2010 ◽  
Vol 123-125 ◽  
pp. 687-690
Author(s):  
Sin Liang Ou ◽  
Po Cheng Kuo ◽  
Don Yau Chiang ◽  
Chin Yen Yeh ◽  
Shih Hsien Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Analysis ◽  
Optical Recording ◽  
Blue Laser ◽  
Bilayer Film ◽  
Recording Media ◽  
Dynamic Tests ◽  
Protective Layers ◽  
Temperature Ranges ◽  
Polycarbonate Substrate

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was deposited on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film. Thermal analysis shows that the GeCu/Si bilayer film has two reflectivity changes with the temperature ranges, 120 °C ~ 165 °C and 310 °C ~ 340 °C. The results of dynamic tests show that the optimum jitter values at recording speeds of 1X and 4X are 5.8% and 5.9%, respectively. The modulations at 1X and 4X recording speeds are all larger than 0.4.

Crystallization Mechanism of Si/Cu100-xZrx Bilayer Film for Write-Once Blue Laser Optical Recording Media

2010 ◽  
Vol 123-125 ◽  
pp. 643-646
Author(s):  
Sin Liang Ou ◽  
Po Cheng Kuo ◽  
Chih Hsiang Hsiao ◽  
Don Yau Chiang ◽  
Chao Te Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Magnetron Sputtering ◽  
Optical Recording ◽  
Crystallization Mechanism ◽  
Blue Laser ◽  
Bilayer Film ◽  
Recording Media ◽  
Protective Layers ◽  
Bilayer Films

Si/Cu100xZrx (x= 0~38.1) bilayer recording thin films were deposited on nature oxidized silicon wafer, and glass substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, optical property, and crystallization mechanism of the Si/Cu100-xZrx bilayer thin films. The optical contrasts of the Si/Cu100-xZrx (x= 0~38.1) bilayer films under 405 nm wavelength are all larger than 15%, and it reaches a high value of 40%, as x= 38.1. This indicates that the Si/Cu100-xZrx (x= 0~38.1) bilayer films are suitable for blue laser optical recording.

Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media

2011 ◽  
Vol 189-193 ◽  
pp. 4430-4433 ◽  
Author(s):  
Sin Liang Ou ◽  
Chin Pao Cheng ◽  
Chin Yen Yeh ◽  
Chung Jen Chung ◽  
Kuo Sheng Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Optical Recording ◽  
Blue Laser ◽  
Recording Media ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Protective Layers ◽  
20 Nm

The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

Ta/Si bilayer thin film for write-once blue laser optical recording media

2011 ◽  
Author(s):  
S. L. Ou ◽  
P. C. Kuo ◽  
C. H. Hsiao ◽  
T. L. Tsai ◽  
S. C. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Recording ◽  
Blue Laser ◽  
Recording Media

CuSi thin film for write-once blue laser optical recording

2011 ◽  
Author(s):  
Sin-Liang Ou ◽  
Po-Cheng Kuo ◽  
Han-Feng Chang ◽  
Chin-Yen Yeh ◽  
Chao-Te Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Recording ◽  
Blue Laser

Optical Properties of Multi-layer Chalcogenide Thin Film for Optical Recording Media

2003 ◽  
Vol 803 ◽  
Author(s):  
Myung-Jin Kang ◽  
Chan-Gyung Park ◽  
Se-Young Choi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Data Storage ◽  
Optical Band Gap ◽  
Optical Recording ◽  
Recording Media ◽  
Optical Contrast ◽  
The Media ◽  
Chalcogenide Thin Film

ABSTRACTWe present the results of optical properties of multi layer thin films as in the media of phase change optical disk data storage. Reflectance and optical contrast of multi layer thin films increased rapidly between 100 °C and 150 °C. Moreover, optical contrasts at different wavelength were also studied. The refractive index and the optical band gap decreased, while the extinction coefficient increases as the crystallization occurs. The Egopt of crystalline thin film was ∼0.6 eV lower than that of amorphous thin film. Egopt decreased as the number of stacked layer increased.

Studies on the Temperature Stability of Pure and Doped Triglycine Sulphate Crystals Using TGA/DTA

2020 ◽  
Vol 10 (3) ◽  
pp. 206-212
Author(s):  
Vijeesh Padmanabhan ◽  
Maneesha P. Madhu ◽  
Supriya M. Hariharan
Keyword(s):  
Thermal Analysis ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Temperature Stability ◽  
Bandgap Energy ◽  
Dsc Analysis ◽  
Slow Cooling ◽  
As Doping ◽  
Similar Dependence ◽  
Temperature Ranges

Aim: To study the temperature stability of TGS doped with ZnSO4, CdCl2, BaCl2, and compare it with that of pure TGS. Objectives: Synthesizing pure and doped TGS and studying their temperature dependence using TGA, DTA, and DSC analysis. Methods: Slow cooling solution growth was used to grow single crystals of pure and doped TGS. The TGA, DTA and DSC analysis was conducted for determining the temperature stability. Results: The thermal analysis of pure and doped TGS shows that the doped samples show a similar dependence on temperature as pure TGS. The temperature of decomposition of pure and doped samples (BTGS, ZTGS, CdTGS) was 226.60°C, 228.38°C, 229.13°C, and 239.13°C respectively. The melting onset of these samples was 214.51°C, 216.04°C, 217.69°C and 216.04°C respectively. Conclusion: The study shows that doping TGS with the above three described materials did not alter their temperature stability considerably. It is a good result as doping TGS, for varying its characteristics like absorbance, reflectance, bandgap energy, etc., which did not alter its temperature stability. Therefore, TGS doped with the above three dopants can be used at the same temperature ranges as of pure TGS but with much-improved efficiency.

Electron Microscopy Study on Amorphous Ge-Sb-Te Thin Film for Phase Change Optical Recording

2003 ◽  
Vol 42 (Part 2, No. 10A) ◽  
pp. L1158-L1160 ◽  
Author(s):  
Muneyuki Naito ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu ◽  
Masaki Takashima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Phase Change ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Optical Recording
Sign in / Sign up

Export Citation Format

Share Document