Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate
2010 ◽
Vol 129-131
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pp. 476-481
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Keyword(s):
We report the preparation of quasi-arrays of aluminum nitride nanocones via chemical vapor deposition on nitriding treated titanium substrate at 800 °C through the reaction between AlCl3 vapor and NH3/N2 gas. The field emission measurement exhibits a fine electron emission with the turn-on field of 10.7 V/mm, which is quite smaller than the turn-on field of 41.3 V/μm for aluminum nitride nanocones deposited on silicon wafer in our previous works. The reduction of turn-on field is attributed to the formation of a layer of conductive tiannium nitride on titanium substrate during the nitriding treatment.
2006 ◽
Vol 75
(1)
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pp. 014711
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2000 ◽
Vol 210
(4)
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pp. 487-495
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Keyword(s):
2007 ◽
Vol 16
(8)
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pp. 1530-1540
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2000 ◽
Vol 372
(1-2)
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pp. 292-299
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1991 ◽
Vol 74
(6)
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pp. 1331-1334
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Keyword(s):
2002 ◽
Vol 323
(1-4)
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pp. 171-173
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