First Principles Calculations of Optical Properties of Cu3N and Cu4N

2010 ◽  
Vol 150-151 ◽  
pp. 1290-1293 ◽  
Author(s):  
Jian Gang Niu ◽  
Wei Gao ◽  
Xiao Ping Dong ◽  
Li Guan ◽  
Fei Xie

First-principles calculations were performed to study the electronic and optical properties of Cu3N and Cu4N. The calculated density of states show that Cu3N is a semiconductor with a 0.5ev gap while Cu4N is metallic. The dielectric functions, absorption coefficients, refractive coefficients and extinction coefficients of Cu3N and Cu4N were obtained and compared with some experiment results. It shows the calculated results agree well with the experimental values.

2015 ◽  
Vol 33 (1) ◽  
pp. 169-174 ◽  
Author(s):  
Shen Tao ◽  
Hu Chao ◽  
Dai Hailong ◽  
Yang Wenlong ◽  
Liu Hongchen ◽  
...  

AbstractFirst principles calculations have been performed to investigate the structure, electronic and optical properties of Y3Fe5O12. Both the cubic and trigonal phases have been considered in our calculation. The calculated structural parameters are slightly larger than the experimental values. The band structures show that Y3Fe5O12 in cubic and trigonal phases have direct band gaps of 0.65 and 0.17 eV. The calculations of dielectric function, absorption, extinction coefficient, refractive index, energy loss function and reflectivity are presented.


2021 ◽  
Vol 21 ◽  
pp. 103827
Author(s):  
Jianrong Wang ◽  
Weibin Zhang ◽  
Qingfeng Wu ◽  
Shufang Gao ◽  
Yuanyuan Jin ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26432-26443
Author(s):  
Chol-Hyok Ri ◽  
Yun-Sim Kim ◽  
Un-Gi Jong ◽  
Yun-Hyok Kye ◽  
Se-Hun Ryang ◽  
...  

We propose lead-free potassium iodide perovskite solid solutions KBI3 with B-site mixing between Ge/Sn and Mg as potential candidates for photocatalysts based on systematic first-principles calculations.


2010 ◽  
Vol 507 (2) ◽  
pp. 356-363 ◽  
Author(s):  
N.A. Noor ◽  
N. Ikram ◽  
S. Ali ◽  
S. Nazir ◽  
S.M. Alay-e-Abbas ◽  
...  

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.


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