Relaxation of Resonant Excitons in CdSe Nanocrystals: Simple Variational Calculation

2011 ◽  
Vol 222 ◽  
pp. 170-174
Author(s):  
Iryna Pundyk ◽  
Igor Dmitruk ◽  
M. Davydenko ◽  
V. Romanyuk ◽  
A. Kasuya
Keyword(s):  
Low Temperature ◽  
Phonon Scattering ◽  
Variational Calculation ◽  
Excited Electron ◽  
Hole Pair ◽  
Photon Absorption ◽  
Cdse Nanocrystals ◽  
Electron Hole ◽  
Peripheral Part ◽  
Electron Hole Pair

The details of energy relaxation and multiple phonon scattering of a resonantly excited electron-hole pair confined in CdSe nanoparticle are studied at low temperature. Simple variational calculation of Ritz type have been performed to explain relaxation of excitons resonantly excited in CdSe nanoparticles in the case if initial photon absorption and creation of electron-hole pair takes place in the peripheral part of nanoparticle.

Silicon-Based Metal-Semiconductor-Metal Detectors

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 55-59 ◽  
Author(s):  
Ch. Buchal ◽  
M. Löken
Keyword(s):  
Energy Gap ◽  
Momentum Conservation ◽  
Visible Spectral Range ◽  
Hole Pair ◽  
Photon Absorption ◽  
Light Sources ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Metal Detectors ◽  
Silicon And Germanium

Photodetectors must provide fast and efficient conversion of photons to charge carriers. When considering semiconductor light sources, the indirect bandgap of silicon and germanium represents a serious obstacle to radiative electron-hole recombinations. Momentum conservation demands the simultaneous interaction of the electron-hole pair with a momentum-matching phonon. As a consequence, radiative recombinations are five orders of magnitude less probable in Si if compared to a direct semiconductor such as GaAs.Although the absorption of a photon and the generation of an electron-hole pair may be considered as the inverse process to emission, photon absorption within indirect semiconductors is a highly probable process if the photon energy is sufficient to bridge the energy gap in a direct process. The resulting electronhole pair is created in an excited state and relaxes sequentially. The ubiquitous-silicon solar cells operate this way. In the visible spectral range, Si photodetectors have demonstrated fast and efficient performance, being readily adapted for opto electronic applications and being fully compatible to standard-silicon processing schemes.

Observation of the effect of DAP separation on electron-hole pair ODMR signals in GaS

1982 ◽  
Vol 44 (4) ◽  
pp. 459-464 ◽  
Author(s):  
N. Killoran ◽  
B.C. Cavenett ◽  
F. Levy
Keyword(s):  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair

scholarly journals Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

2015 ◽  
Vol 114 (24) ◽  
Author(s):  
Nicholas R. Monahan ◽  
Kristopher W. Williams ◽  
Bharat Kumar ◽  
Colin Nuckolls ◽  
X.-Y. Zhu
Keyword(s):  
Direct Observation ◽  
Organic Semiconductor ◽  
Hole Pair ◽  
Electron Hole ◽  
Semiconductor Interface ◽  
Pair Separation ◽  
Electron Hole Pair

Electron-hole pair generation energy in gallium arsenide byxand γ photons

2002 ◽  
Vol 92 (3) ◽  
pp. 1248-1255 ◽  
Author(s):  
Giuseppe Bertuccio ◽  
Diego Maiocchi
Keyword(s):  
Gallium Arsenide ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
Pair Generation
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