Analyses of TID Induced Back Channel Threshold Voltage Shift of NMOS/SOI

2011 ◽  
Vol 403-408 ◽  
pp. 2243-2246
Author(s):  
Wei He ◽  
Zheng Xuan Zhang
Keyword(s):  
Finite Element ◽  
Charge Density ◽  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
New Approach ◽  
Voltage Shift ◽  
Buried Oxide ◽  
Element Simulation ◽  
Radiation Induced ◽  
Nmos Transistors

A new approach to model the total ionizing dose (TID) induced back channel threshold voltage shift in SOI NMOS transistors was presented. Using a 2D finite element simulation, the trapped charge density in the buried oxide of SOI NMOS resulting from irradiating was analyzed. The model derives from the Radiation-Induced parasitic MOSFET created at the back of the buried oxide . A comparison of the theoretical and experimental results have been obtained for different radiation doses.The agreement between experimental and simulated curves is excellent.

scholarly journals Radiation-sensitive field effect transistor response to gamma-ray irradiation

2011 ◽  
Vol 26 (1) ◽  
pp. 25-31 ◽  
Author(s):  
Milic Pejovic ◽  
Momcilo Pejovic ◽  
Aleksandar Jaksic
Keyword(s):  
Threshold Voltage ◽  
Gamma Ray ◽  
Interface Traps ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Transfer Characteristics ◽  
Radiation Induced ◽  
Gamma Ray Irradiation ◽  
Oxide Traps

The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the gate bias during the irradiation of 5 V and 10 V the sensitivity of these transistors can be presented as the threshold voltage shift and the absorbed irradiation dose ratio. On the bases of the subthreshold characteristics and transfer characteristics in saturation using the midgap technique we have determined the densities of radiation induced oxide traps and interface traps responsible for the threshold voltage shift. In addition, the charge pumping technique was used to determine the energy density of true interface traps. It has been shown that radiation-induced oxide traps have dominant role on threshold voltage shift, especially for gate biases during the irradiation of 5 V and 10 V.

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