Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
1998 ◽
2010 ◽
2008 ◽
2018 ◽
2003 ◽
2000 ◽
Vol 47
(6)
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pp. 1872-1878
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1995 ◽
Vol 34
(Part 2, No. 8A)
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pp. L978-L980
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