Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

1998 ◽  
Author(s):  
Keyword(s):  
Ionizing Radiation ◽  
Threshold Voltage ◽  
Interface States ◽  
Test Method ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Subthreshold Current ◽  
Current Voltage ◽  
Radiation Induced ◽  
Current Voltage Characteristics

Performance of ZnO TFTs with AlN as Insulator

2007 ◽  
Vol 1035 ◽  
Author(s):  
Maria Merlyne De Souza ◽  
Richard B Cross ◽  
Suhas Jejurikar ◽  
K P Adhi
Keyword(s):  
Surface Roughness ◽  
Threshold Voltage ◽  
Rf Sputtering ◽  
Interface States ◽  
Aluminium Nitride ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Positive Threshold ◽  
The Stability

AbstractThe performance of ZnO TFTs fabricated via RF sputtering, with Aluminium Nitride (AlN) as the underlying insulator are reported. The surface roughness of ZnO with AlN is lower than that with SiN by at least 5 times, and that with SiO2 by 30 times. The resulting mobility for the three insulators AlN, SiN, SiO2 using identical process is found to be 3, 0.2-0.7 and 0.1-0.25 cm2/Vs respectively. There does not appear to be any corresponding improvement in the stability of the AlN devices. The devices demonstrate significant positive threshold voltage shift with positive gate bias and negative threshold voltage shift with negative gate bias. The underlying cause is surmised to be ultra-fast interface states in combination with bulk traps in the ZnO.

Electrical Instabilities and 1/f Noise in Organic Pentacene Thin Film Transistors

2000 ◽  
Vol 660 ◽  
Author(s):  
P. V. Necliudov ◽  
M. Shur ◽  
D. J. Gundlach ◽  
T. N. Jackson
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Threshold Voltage Shift ◽  
Current Voltage ◽  
Noise Measurements ◽  
Current Voltage Characteristics ◽  
Amorphous Si ◽  
Bias Temperature Stress

ABSTRACTWe report on the influence of Bias-Temperature Stress (BTS) on the pentacene Thin Film Transistors (TFTs) electrical characteristics and on their 1/f noise level. The gate BTS primarily affects the TFT threshold voltage, leaving both mobility and sub-threshold slope values almost unchanged. The degree of the threshold voltage shift induced by the positive or negative BTS depends on the TFT design and the BTS parameters. The current-voltage characteristics time dependence of the organic TFTs, subjected to the BTS, resembles that for amorphous-Si TFTs. The results of the 1/f noise measurements in the organic TFTs allowed us to conclude that the gate BTS primarily affects the TFT contact regions, resulting in the increase of both the contact noise and the contact resistance.

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