Manufacture and Characterization of TiO2 Nanowires by CVD

2011 ◽  
Vol 415-417 ◽  
pp. 697-700 ◽  
Author(s):  
Wei Long Liu ◽  
Shu Huei Hsieh ◽  
Wen Jauh Chen
Keyword(s):  
Electron Microscope ◽  
Elevated Temperature ◽  
Scanning Electron Microscope ◽  
Gas Mixture ◽  
Energy Dispersion ◽  
Energy Dispersion Spectrometer ◽  
Nanosized Titania ◽  
Scanning Electron

Under the catalysis of Co metal, the nanosized titania could be grown on Ti substrate at elevated temperature under a gas mixture of N2, O2, CH4 , and H2O. The nanosized titania was characterized by scanning electron microscope for its morphology, and by an energy dispersion spectrometer for its composition. The results showed that the straight and long titania nanowire could be formed at 900°C under a gas mixture of N2, O2, and CH4. When H2O vapor was added to the gas mixture, the titania nanowire became somewhat curved. The tiania nanowire was oxygen deficient, i.e. TiO2-X.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Morphological Characterization of Fabricated Aluminum Interdigitated Electrodes on Silicon Substrate

2015 ◽  
Vol 1109 ◽  
pp. 381-384
Author(s):  
M. Safwan Azmi ◽  
Sharipah Nadzirah ◽  
Uda Hashim
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Silicon Substrate ◽  
Morphological Characterization ◽  
Interdigitated Electrodes ◽  
Photolithography Process ◽  
Scanning Electron

The purpose of this paper is to study the morphological characterization of aluminum interdigitated electrodes (IDE) of different gap sizes on silicon substrate. The electrodes were fabricated using standard photolithography process and were done so with sizes of 12 μm, 10 μm and 7 μm. The electrodes were morphologically characterized using scanning electron microscope (SEM) and high-powered microscope (HPM).Keywords: morphological, interdigitated electrodes, aluminum

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