Compositional and Structural Characterization of Heterostructure InGaN-Based Light-Emitting Diode by High Resolution X-Ray Diffraction

2012 ◽  
Vol 620 ◽  
pp. 22-27 ◽  
Author(s):  
Ahmad Hadi Ali ◽  
Ahmad Shuhaimi ◽  
Hassan Zainuriah ◽  
Yushamdan Yusof
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Structural Characterization ◽  
Light Emitting Diode ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray ◽  
Multi Quantum Well

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63oand 72.98o, respectively. Rocking curveφ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC)ω-scan, screw and mix dislocation density is found as 2.85 × 109cm-2, while pure edge dislocation density is found as 2.23 × 1011cm-2.

Structural characterization of La2−xMxCuO4 (M = Sr,Ba) samples by synchrotron x-ray and neutron powder diffraction techniques

1988 ◽  
Vol 3 (6) ◽  
pp. 1327-1335 ◽  
Author(s):  
D. E. Cox ◽  
S. C. Moss ◽  
R. L. Meng ◽  
P. H. Hor ◽  
C. W. Chu
Keyword(s):  
High Resolution ◽  
Rietveld Refinement ◽  
Powder Diffraction ◽  
Structural Characterization ◽  
Neutron Powder Diffraction ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
Neutron Data ◽  
X Ray

High-resolution synchrotron x-ray powder diffraction studies on samples of La2−xMxCuO4 (M = Sr,Ba) prepared by standard ceramic techniques show that macroscopic compositional inhomogeneities may exist that are unlikely to be revealed by conventional x-ray diffraction methods. Rietveld refinement of neutron data collected at 200, 50, and 11 K from one such sample, nominally La1.8Sr0.2CuO4, gave satisfactory fits to a tetragonal structure of K2NiF4 type at all three temperatures. However, careful individual peak fits revealed that part of the sample transforms to orthorhombic between 200 and 50 K. It is suggested that this multiphase character has an important influence on the superconducting properties.

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

2009 ◽  
Vol 24 (2) ◽  
pp. 78-81 ◽  
Author(s):  
T. N. Blanton ◽  
C. L. Barnes ◽  
M. Holland ◽  
K. B. Kahen ◽  
S. K. Gupta ◽  
...  
Keyword(s):  
High Resolution ◽  
Phase Identification ◽  
Pin Diode ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sample Throughput ◽  
Gaas Substrates ◽  
Deposition Parameters

ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pin-diode LED applications. In this study, a conventional Bragg-Brentano diffractometer (BBD) has been used to screen samples for phase identification, crystallite size, presence of polycrystalline ZnSe, and initial rocking curve (RC) analysis. A limitation of the conventional diffractometer is that the smallest RC full width at half maximum (FWHM) that can be achieved is 500 to 600 arc sec. As deposition parameters are optimized and the RC limit of the conventional diffractometer is reached, analysis is moved to a four-bounce high-resolution diffractometer (HRD). Although more time for analysis is required, using the HRD has a RC resolution advantage, where RCs of <20 arc sec are obtained for neat GaAs wafers. Combining the BBD and HRD instruments for analysis of ZnSe films grown on GaAs substrates allows for an efficient means of high sample throughput combined with an accurate measurement of film alignment.

Structural characterization of Si1 − x Gex ultrathin quantum wells in a Si matrix by high-resolution X-ray diffraction

2002 ◽  
Vol 47 (6) ◽  
pp. 1058-1062
Author(s):  
A. M. Afanas’ev ◽  
M. A. Chuev ◽  
R. M. Imamov ◽  
É. Kh. Mukhamedzhanov ◽  
M. M. Rzaev ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Structural Characterization ◽  
X Ray Diffraction ◽  
X Ray

Structural Characterization of InAs/(GaIn)Sb Superlattices for IR Optoelectronics

1996 ◽  
Vol 421 ◽  
Author(s):  
J. Wagner ◽  
J. Schmitz ◽  
F. Fuchs ◽  
U. Weimar ◽  
N. Herres ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.

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