Investigation on Properties of β-Ga2O3 Solid Films with Zno Nano-Interlayer

2012 ◽  
Vol 629 ◽  
pp. 266-272
Author(s):  
De Min Kong ◽  
Ai Hua Liu ◽  
Bao Yuan Man ◽  
Mei Liu ◽  
Jin Jin Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Lattice Structure ◽  
High Vacuum ◽  
Composite Films ◽  
High Quality ◽  
Nano Composite ◽  
Solid Films ◽  
Sapphire Substrates ◽  
Vacuum Atmosphere

High-quality β-Ga2O3 films andβ-Ga2O3 /ZnO/β-Ga2O3 nano composite thin films were fabricated on the sapphire substrates in the high vacuum atmosphere by laser molecular beam epitaxy (LMBE). The lattice structure and optical properties of these films were characterized.With the increase of the sputtering time of ZnO target ,Photoluminescence spectrums and Raman spectrums of the β-Ga2O3 /ZnO/β-Ga2O3 nano composite films were shifted regularly . When the ZnO target was sputtered 30min , the stronggest peak of Raman spectrum was appeared at 267nm . Besides,the composition ofβ-Ga2O3 /ZnO/β-Ga2O3 nano composite film was described .

Growth of high-quality ZnO thin films on ( $11\bar{2}0$ ) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2012 ◽  
Vol 112 (4) ◽  
pp. 1051-1055 ◽  
Author(s):  
Ping Ding ◽  
Xinhua Pan ◽  
Zhizhen Ye ◽  
Haiping He ◽  
Honghai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
High Quality ◽  
Sapphire Substrates

Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

2016 ◽  
Vol 381 ◽  
pp. 32-35 ◽  
Author(s):  
Mitsuaki Yano ◽  
Kazuto Koike ◽  
Masayuki Matsuo ◽  
Takayuki Murayama ◽  
Yoshiyuki Harada ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Wo3 Thin Films

High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy

2020 ◽  
Vol 127 (24) ◽  
pp. 243901 ◽  
Author(s):  
S. P. Bommanaboyena ◽  
T. Bergfeldt ◽  
R. Heller ◽  
M. Kläui ◽  
M. Jourdan
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

Fabrication and Characterization of Electrically Functional Lanthanum Hexaboride Thin Films on Ultrasmooth Sapphire Substrates

2008 ◽  
Vol 1148 ◽  
Author(s):  
Yushi Kato ◽  
Yusaburo Ono ◽  
Yasuyuki Akita ◽  
Makoto Hosaka ◽  
Naoki Shiraishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Lattice Parameter ◽  
Lanthanum Hexaboride ◽  
Root Mean Square Roughness ◽  
Sapphire Substrates ◽  
Fabrication And Characterization ◽  
Laser Mbe ◽  
Atomically Flat

AbstractThe crystal growth of lanthanum hexaboride (LaB6) thin films was examined by applying the laser molecular beam epitaxy (laser MBE) process. C-axis (100) highly-oriented LaB6 thin films could be fabricated on ultrasmooth sapphire (α-Al2O3 single crystal) (0001) substrates with atomic steps of 0.2 nm in height and atomically flat terraces. The obtained film exhibited a smooth surface with root mean square roughness of 0.15 nm. The lattice parameter of the LaB6 thin film was close to the bulk value reported previously. In the case of deposition on commercial mirror-polished sapphire substrates, the grown film was amorphous. The resistivity of the prepared crystalline LaB6 thin films was as low as 2.2 × 10−4 Ω cm and almost constant in the temperature range of 10–300 K.

Ultra-high-vacuum epitaxial growth of MgB2(0001) thin films on Mg(0001) via molecular beam epitaxy

2004 ◽  
Vol 16 (33) ◽  
pp. S3451-S3458 ◽  
Author(s):  
R Macovez ◽  
C Cepek ◽  
M Sancrotti ◽  
A Goldoni ◽  
L Petaccia ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Vacuum ◽  
Ultra High Vacuum

Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant

2009 ◽  
Vol 95 (26) ◽  
pp. 262105 ◽  
Author(s):  
Oliver Bierwagen ◽  
Mark E. White ◽  
Min-Ying Tsai ◽  
James S. Speck
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality
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