Nonequilibrium Charge Carrier Lifetime Testing Equipment for Semiconductor Materials by a Contactless Microwave Phase Method

2013 ◽  
Vol 655-657 ◽  
pp. 830-833
Author(s):  
Song Chen ◽  
Zu Rong Ni ◽  
Fen Xiao

The accurate measurement of nonequilibrium charge carrier lifetime is of vital significance in research and manufacture of crystalline silicon solar cells. A testing equipment based on a contactless microwave phase method was implemented by being embedded with GPIB, FPGA and a lock-in analyzer. A friendly operation interface was developed, based on the graphic programming language LabVIEW. The virtue of the equipment is achieved by automatic data acquisition and processing, which improves the automatization, efficiency and accuracy of the measurement.

Solar RRL ◽  
2021 ◽  
Author(s):  
Bernd Steinhauser ◽  
Tim Niewelt ◽  
Armin Richter ◽  
Rebekka Eberle ◽  
Martin Schubert

2016 ◽  
Vol 61 (4) ◽  
pp. 1889-1894 ◽  
Author(s):  
P. Panek

Abstract The influence of a p-type Si with different resistivity, charge carrier lifetime and emitter dopant impurities concentration on the crystalline silicon solar cells parameters were analyzed and experimentally checked. The findings were determined by quasi-steady-state photoconductance, current-voltage and spectral response methods. The study was accompanied by solar device simulation using a numerical PC1D program. The highest photoconversion efficiency of 15.13 % was obtained for the moncrystalline (Cz-Si) solar cell with a base resistivity of 1.8 Ωcm and an effective charge carrier lifetime of 22.9 μs. The results clearly confirmed the importance concerning the dopant level in a Si base material in relation to open circuit voltage and short circuit current possible to obtain from the solar cell. Reduction of a base material resistivtiy leads to a lower value of an effective charge carrier lifetime and photoconversion efficiency both for Cz-Si and multicrystalline (mc-Si) solar cells. The experimental results and calculation showed, that in the case of a solar cell produced on the basis of crystalline silicon, the most important spectral range for an efficiency of a cell is covering a wavelength range of 587 ÷ 838 nm.


2013 ◽  
Vol 1576 ◽  
Author(s):  
A. Tyazhev ◽  
D. Budnitsky ◽  
D. Mokeev ◽  
V. Novikov ◽  
A. Zarubin ◽  
...  

ABSTRACTResults of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium charge carrier lifetime – hundreds of nanoseconds. Prototypes of microstrip and array HR GaAs sensors have been manufactured and tested. It is demonstrated that the sensors provide spatial resolution according to the pixel pitch and allow obtaining high quality X-ray images.


2011 ◽  
Vol 110 (5) ◽  
pp. 054508 ◽  
Author(s):  
David Kiliani ◽  
Gabriel Micard ◽  
Benjamin Steuer ◽  
Bernd Raabe ◽  
Axel Herguth ◽  
...  

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