GaAs Pixel Detectors

2013 ◽  
Vol 1576 ◽  
Author(s):  
A. Tyazhev ◽  
D. Budnitsky ◽  
D. Mokeev ◽  
V. Novikov ◽  
A. Zarubin ◽  
...  

ABSTRACTResults of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium charge carrier lifetime – hundreds of nanoseconds. Prototypes of microstrip and array HR GaAs sensors have been manufactured and tested. It is demonstrated that the sensors provide spatial resolution according to the pixel pitch and allow obtaining high quality X-ray images.

2013 ◽  
Vol 655-657 ◽  
pp. 830-833
Author(s):  
Song Chen ◽  
Zu Rong Ni ◽  
Fen Xiao

The accurate measurement of nonequilibrium charge carrier lifetime is of vital significance in research and manufacture of crystalline silicon solar cells. A testing equipment based on a contactless microwave phase method was implemented by being embedded with GPIB, FPGA and a lock-in analyzer. A friendly operation interface was developed, based on the graphic programming language LabVIEW. The virtue of the equipment is achieved by automatic data acquisition and processing, which improves the automatization, efficiency and accuracy of the measurement.


Solar RRL ◽  
2021 ◽  
Author(s):  
Bernd Steinhauser ◽  
Tim Niewelt ◽  
Armin Richter ◽  
Rebekka Eberle ◽  
Martin Schubert

2017 ◽  
Vol 7 (22) ◽  
pp. 1701536 ◽  
Author(s):  
Ji-Wook Jang ◽  
Dennis Friedrich ◽  
Sönke Müller ◽  
Marlene Lamers ◽  
Hannes Hempel ◽  
...  

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