Preparation and Characterization of Tungsten Trioxide (WO3) Thin Films

2013 ◽  
Vol 678 ◽  
pp. 32-36 ◽  
Author(s):  
Raveendran Lavanya ◽  
Gandhimathinathan Saroja ◽  
Veerapandy Vasu

The thin films of WO3were prepared on cleaned microscopic glass substrates by the electron beam evaporation technique. The films were coated at room temperature using pure WO3pellets as source. The prepared films were further post heat treated at different temperatures (100°C to 350°C) for about 1hr in air. The optical properties of WO3 thin films were studied in detail. The increase in the density of the film as the annealing temperature increases have been confirmed by the transmittance spectra. The film annealed at 250°C shows a strong photoluminescence peak. The peak intensity is found to be less for all other temperature. The observed results were discussed in terms of crystalline nature of WO3.

2011 ◽  
Vol 46 (4) ◽  
pp. 615-620 ◽  
Author(s):  
Reza Keshavarzi ◽  
Valiollah Mirkhani ◽  
Majid Moghadam ◽  
Shahram Tangestaninejad ◽  
Iraj Mohammadpoor-Baltork ◽  
...  

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..


2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.


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