Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition

2013 ◽  
Vol 858 ◽  
pp. 171-176
Author(s):  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Suguru Funasaki ◽  
Kyohei Yamashita ◽  
Chen Li ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Carrier Transport ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Zero Bias ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheungs method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

Diode Parameters of Mesa Structural n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography

2015 ◽  
Vol 1103 ◽  
pp. 91-96
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Motoki Takahara ◽  
Ryūhei Iwasaki ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Low Temperatures ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Lift Off ◽  
P Type ◽  
Photolithography Process

Mesa structural n-type nanocrystalline-FeSi2/p-type Si heterojunctions were successfully fabricated by a lift-off technique combined with a photolithography process. Their current-voltage characteristics were measured at low temperatures range from 300 K down to 60 K. We estimated their diode parameters such as ideality factor, barrier height and series resistance based on the thermionic emission theory and Cheung’s method. From the estimation by the thermionic emission theory, the obtained results show an increase of ideality factor and a decrease of barrier height at low temperatures. The estimation by Cheung’s method shows that the values of ideality factor and barrier height are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)-J and H(J)-J plots, which are approximately equal to each others, are increased at low temperatures.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Electrical Characteristics of n-Type Nanocrystalline FeSi2/Intrinsic Si/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering

2013 ◽  
Vol 446-447 ◽  
pp. 88-92
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Ryūhei Iwasaki ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Low Temperatures ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Straight Line ◽  
Current Voltage ◽  
P Type ◽  
Direct Current Sputtering

n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by FTDCS. In order to estimate their diode parameters such as ideality factor, barrier height and series resistance, their current-voltage characteristics were measured in the temperature range from 300 to 77 K and analyzed on the basis of thermionic emission theory and Cheungs method. Based on thermionic emission theory, the ideality factor was calculated from the slope of the linear part from the forward lnJ-V characteristics. The barrier height was calculated once the saturation current density was derived from the straight line intercept of lnJ-V plot at a zero voltage. The obtained results exhibit an increase of ideality factor and a decrease of barrier height at low temperatures, which might be owing to inhomogeneity of material and non-uniformity of charge at the interface. Based on Cheungs method, the ideality factor and barrier height were estimated from y-axis intercept of dV/d (lnJ)J plot and y-axis intercept of H(J)J plot, respectively. The series resistance was analyzed from the slopes of dV/d (lnJ)J and H(J)J plots. The values of ideality factor and barrier height obtained from this method are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)J and H(J)J plots, which were approximately equal to each others, were increased as the temperature decreased. This result should be owing to the increased ideality factor and remarkably reduced carrier concentrations at low temperatures.

Temperature dependant electrical properties of formyl-TIPPCu(II)/p-Si heterojunction diode

2014 ◽  
Vol 28 (13) ◽  
pp. 1450100
Author(s):  
Dil Nawaz Khan ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Muhammad Tahir ◽  
Muhammad Yaseen ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Series Resistance ◽  
Electrical Characterization ◽  
Heterojunction Diode ◽  
Zero Bias ◽  
Current Voltage ◽  
Temperature Dependant ◽  
Increasing Temperature ◽  
P Type

This paper reports the temperature dependent electrical characterization of formyl- TIPPCu (II)/p- Si heterojunction diode which was fabricated by growing thin films of formyl- TIPPCu (II) on the p-type silicon substrate by thermal sublimation technique. The variation in electrical characteristics of the fabricated devices has been systematically investigated as the function of temperature by using current–voltage (I–V) measurements in the temperature range 299–339 K. The diode parameters like ideality factor, zero bias barrier height and parasitic series resistance have been found to be strongly temperature dependant. The zero bias barrier height increases while ideality factor and series resistance decreases with increasing temperature.

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

2016 ◽  
Vol 858 ◽  
pp. 1170-1173 ◽  
Author(s):  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

Mechanism of Carrier Transport in n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1119 ◽  
pp. 189-193
Author(s):  
Nathaporn Promros ◽  
Motoki Takahara ◽  
Ryuji Baba ◽  
Tarek M. Mostafa ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Carrier Transport ◽  
Linear Part ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Forward Bias Voltage ◽  
Space Charge Limit ◽  
Current Voltage ◽  
P Type ◽  
Direct Current Sputtering

Preparation of n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions was accomplished by facing-target direct-current sputtering (FTDCS) and measuring their current-voltage characteristic curves at low temperatures ranging from 300 K down to 50 K. A mechanism of carrier transport in the fabricated heterojunctions was investigated based on thermionic emission theory. According to this theory, the ideality factor was calculated from the slope of the linear part of the forward lnJ-V plot. The ideality factor was 1.12 at 300 K and increased to 1.99 at 225 K. The estimated ideality factor implied that a recombination process was the predominant mechanism of carrier transport. When the temperatures decreased below 225 K, the ideality factor was estimated to be higher than two and parameter A was estimated to be constant. The obtained results implied that the mechanism of carrier transport was governed by a trap-assisted multi-step tunneling process. At high forward bias voltage, the predominant mechanism of carrier transport was changed into a space charge limit current process.

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