Temperature dependence of carrier dynamics for InAs∕GaAs quantum dot infrared photodetectors

2005 ◽  
Vol 23 (5) ◽  
pp. 1909 ◽  
Author(s):  
Chun-Yuan Huang ◽  
Tzu-Min Ou ◽  
Shu-Ting Chou ◽  
Cheng-Shuan Tsai ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Temperature Dependence ◽  
Carrier Dynamics ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot

Single-Period InAs–GaAs Quantum-Dot Infrared Photodetectors

2008 ◽  
Vol 20 (18) ◽  
pp. 1575-1577
Author(s):  
Shu-Ting Chou ◽  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Single Period ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot

Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors

2011 ◽  
Vol 47 (5) ◽  
pp. 577-590 ◽  
Author(s):  
I McKerracher ◽  
J Wong-Leung ◽  
G Jolley ◽  
Lan Fu ◽  
H H Tan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot

High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors

2011 ◽  
Vol 23 (2) ◽  
pp. 106-108 ◽  
Author(s):  
Wei-Hsun Lin ◽  
Chi-Che Tseng ◽  
Kuang-Ping Chao ◽  
Shu-Cheng Mai ◽  
Shu-Yen Kung ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot ◽  
High Temperature Operation

Carrier Hopping and Relaxation in InAs/GaAs Quantum Dot Heterostructures

2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Thermal Emission ◽  
Carrier Dynamics ◽  
Photoluminescence Spectra ◽  
Discrete Energy ◽  
Discrete Energy Level ◽  
Size Uniformity ◽  
Gaas Quantum Dot

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.

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