Carrier dynamics of electrons in n-type modulation-doped InAs/GaAs quantum dot structure studied using THz time-domain spectroscopy

2007 ◽  
Author(s):  
Seung Jae Oh ◽  
Chul Kang ◽  
In Hee Maeng ◽  
Nam Ki Cho ◽  
Jin Dong Song ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Time Domain ◽  
Carrier Dynamics ◽  
Time Domain Spectroscopy ◽  
Gaas Quantum Dot

Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths

2021 ◽  
Author(s):  
Zhonghui Yao ◽  
Xu Wang ◽  
Hongmei Chen ◽  
Tou Wang ◽  
Liang Qin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

Carrier Hopping and Relaxation in InAs/GaAs Quantum Dot Heterostructures

2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Thermal Emission ◽  
Carrier Dynamics ◽  
Photoluminescence Spectra ◽  
Discrete Energy ◽  
Discrete Energy Level ◽  
Size Uniformity ◽  
Gaas Quantum Dot

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.

Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Author(s):  
Yuji Nakagawa ◽  
Mitsuru Sugawara ◽  
Kohki Mukai ◽  
Yoshiaki Nakata ◽  
Hiroshi Ishikawa
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1635 ◽  
pp. 43-48 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Broad Area ◽  
Time Resolved ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.

scholarly journals Low-temperature carrier dynamics in MBE-grown InAs/GaAs single- and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain spectroscopy

2019 ◽  
Vol 10 (1) ◽  
pp. 178
Author(s):  
Alexander E. De Los Reyes ◽  
John Daniel Vasquez ◽  
Hannah R. Bardolaza ◽  
Lorenzo P. Lopez ◽  
Che-Yung Chang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Time Domain ◽  
Carrier Dynamics ◽  
Terahertz Time Domain Spectroscopy ◽  
Time Domain Spectroscopy
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