Effect of Post-Deposition Annealing Process on the Resistive Switching Behaviour of TiO2 Thin Films by Sol-Gel Method

2014 ◽  
Vol 925 ◽  
pp. 125-129 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Mohd Firdaus Mohamed Soder ◽  
Mohamed Zahidi Musa ◽  
Raudah A. Bakar ◽  
Wan Fazlida Hanim Abdullah ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Annealing Process ◽  
Device Performance ◽  
Post Deposition Annealing ◽  
Post Annealing ◽  
Switching Behaviour ◽  
Post Deposition ◽  
Physical Thickness

The paper presents the memristive behaviour of spin-coated titania thin films on ITO substrate. The sample was annealed in air ambient at different annealing temperature and duration of 250 and 450 °C for 20 and 60 min. The effect of post-annealing process to the physical thickness and crystallinity of the films towards switching behaviour was studied. It was found that the thickness and crystallinity of the films increases as the post annealing process increases. Sample annealed at 250 °C for 20 min with thinner film showed better switching behaviour even though the sample is still in amorphous form. Thus, in our work, we believed that the crystallinity of the films does not affect the switching behaviour of the sample. The reliability of device performance was studied by repeating the measurement for three times.

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 545-548 ◽  
Author(s):  
Chee Chung Hoong ◽  
Kuan Yew Cheong
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Post Deposition Annealing ◽  
Different Temperatures ◽  
Effective Oxide Charge ◽  
Post Deposition

The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on metal-oxide-semiconductor characteristics of sol-gel derived HfO2 gate on n-type 4H-SiC have been investigated. After 30 min of the annealing, an accumulation of positive effective oxide charge (Qeff) has been observed in all samples. The total interface trap density and Qeff of the oxides annealed at 850 and 950 oC are comparable but an increment and reduction of the respective densities have been recorded when the oxide was annealed at 1050 oC. A reduction of near interface trap density has been revealed as the annealing temperature has been increased. These observation was closely related to the increment of leakage current density as the annealing temperature increased.

Improving the Properties of Sol–Gel Deposition SrBi4Ti4O15 Thin Films by Post-annealing Process

2013 ◽  
pp. 803-811
Author(s):  
Wen-Cheng Tzou ◽  
Ping-Shou Cheng ◽  
Wen-Chung Chang ◽  
Chien-Chen Diao ◽  
Cheng-Fu Yang
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Annealing Process ◽  
Post Annealing

scholarly journals Effects of Temperature on the Structural and Optical Preperties of AgGaSe2 Thin Films

1970 ◽  
Vol 33 (2) ◽  
pp. 179-188
Author(s):  
MRA Bhuiyan ◽  
DK Saha ◽  
SM Firoz Hasan
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Visible Region ◽  
Wavelength Region ◽  
Band Gap Energy ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Glass Substrates ◽  
Academy Of Sciences ◽  
Post Deposition

In this study, AgGaSe2 (AGS) thin films were formed onto cleaned glass substrates by using the stacked elemental layer (SEL) deposition technique in vacuum. The films were prepared at the post-deposition annealing temperature from 100 to 350°C for 15 min duration. The atomic composition of the films was measured by energy dispersive analysis of X-ray (EDAX) method. The films ascertain the compositional uniformity. The X-ray diffraction (XRD) has been employed to study the structure of the films. The structures of the films are found to be polycrystalline in nature. The lattice parameters, grain size, strain and dislocation densities of the films were calculated. Optical characteristics of the films were ascertained by spectrophotometer in the photon wavelength ranging between 300 and 2500 nm. The transmittance was found to increase with the increase of annealing temperature. The transmittance falls steeply with decreasing wavelength. It revealed that AGS films have considerable absorption throughout the wavelength region from 400 to 800 nm. The optical band gap energy has been evaluated. Two possible direct allowed and direct forbidden transitions have been observed for all the AGS films in visible region. The former varied from 1.67 to 1.75 eV and the later from 2.05 to 2.08 eV, depending on the post-deposition annealing temperature of the films. DOI: 10.3329/jbas.v33i2.4101 Journal of Bangladesh Academy of Sciences, Vol. 33, No. 2, 179-188, 2009

Effect of post annealing temperature on structural and optical properties of ZnCdO thin films deposited by sol–gel method

2011 ◽  
Vol 258 (5) ◽  
pp. 1881-1887 ◽  
Author(s):  
Amanpal Singh ◽  
Dinesh Kumar ◽  
P.K. Khanna ◽  
Bhubesh Chander Joshi ◽  
Mukesh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Structural And Optical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Post Annealing ◽  
Post Annealing Temperature

INFLUENCE OF POST ANNEALING ON SOL–GEL DEPOSITED ZnO THIN FILMS

2014 ◽  
Vol 21 (04) ◽  
pp. 1450046 ◽  
Author(s):  
HEMALATA BHADANE ◽  
EDMUND SAMUEL ◽  
DINESH KUMAR GAUTAM
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Visible Region ◽  
Average Crystallite Size ◽  
Zno Thin Films ◽  
Nanocrystalline Films ◽  
Post Annealing ◽  
Deposited Films ◽  
Lower Resistivity

The effect of annealing temperature on sol–gel deposited ZnO thin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition of ZnO thin films. The transmittance of annealed ZnO thin films is greater than 80% in visible region with bandgap ranging from 3.25–3.19 eV. The films annealed at 450°C temperature shows lower resistivity value of 527.241 Ωm. The deposited nanocrystalline films are suitable for biosensing applications due to its higher surface area.

Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process

2021 ◽  
Author(s):  
Yuxia Zhu ◽  
Xiangqian Xiu ◽  
Fei Cheng ◽  
Yuewen Li ◽  
Zili Xie ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Process ◽  
Post Annealing
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