Fabrication of Silicon Nanowires by Electroless Etching for Thermoelectric Application

2013 ◽  
Vol 652-654 ◽  
pp. 642-646 ◽  
Author(s):  
Hsin Luen Tsai
Keyword(s):  
Silicon Nanowires ◽  
Power Output ◽  
Silicon Nanowire ◽  
Solution Concentration ◽  
Nanowire Arrays ◽  
Thermoelectric Device ◽  
Etching Time ◽  
Electroless Etching ◽  
Silicon Nanowire Arrays ◽  
Chip Size

The fabrication procedure of silicon nanowire thermoelectric device has been developed based on the electroless etching method. Under a fixed etching solution concentration ratio and the etching reaction temperature, silicon nanowire arrays of different lengths manufactured at different etching time were investigated. The longer etching time results in the longer nanowire length. The silicon nanowire arrays were utilized to produce a silicon nanowire thermoelectric device. The I-V characteristics of the present SiNWs thermoelectric device were recorded under different heating temperatures, and the power outputs of silicon nanowire thermoelectric devices were calculated. The longer the silicon nanowire thermoelectric device lines, the greater the power output of thermoelectric device is. The SiNWs TED power output in the present study ranges from 1.62 to 7.2 nano-Watt with the chip size 2×2 cm2 while the applied temperature at 150 °C.

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

Field-Effect Transistors Based on Silicon Nanowire Arrays: Effect of the Good and the Bad Silicon Nanowires

2012 ◽  
Vol 4 (8) ◽  
pp. 4251-4258 ◽  
Author(s):  
Bin Wang ◽  
Thomas Stelzner ◽  
Rawi Dirawi ◽  
Ossama Assad ◽  
Nisreen Shehada ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays

Dye-Improved Optical Absorption of Vertically Aligned Silicon Nanowire Arrays Synthesized by Electroless Etching of Silicon Wafer

2014 ◽  
Vol 895 ◽  
pp. 200-203 ◽  
Author(s):  
Hui Chiang Teoh ◽  
Sabar Derita Hutagalung
Keyword(s):  
Silicon Nanowires ◽  
High Performance ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Electroless Etching ◽  
Dye Sensitized ◽  
Silicon Nanowire Arrays ◽  
Wide Range ◽  
Vertically Aligned ◽  
Si Wafer

Silicon nanowires (SiNWs) are important candidate for high performance electronic and optoelectronic devices due to their unique structures, electrical and optical properties. SiNWs were fabricated by silver-assisted electroless etching of Si wafer. Vertically aligned SiNW arrays with length about 8.75 μm and diameter of less than 90 nm have been fabricated. The reflectance of SiNWs without dye (12%) is greatly lower compared to bare Si wafer (25%). Therefore, SiNWs on Si substrate can be used as a good anti-reflection layer for a wide range of incident light. The reflectance of dye-sensitized SiNWs with red, green and blue dyes is 7%, 5.5%, and 5% respectively. The results confirmed that the reflectance of SiNWs with dye is much lower compared to SiNWs without dye and bare Si wafer. It was proven that dye on SiNWs can be used to reduce the reflectance (improved absorption) about 40% compared to SiNWs without dye.

Fabrication of Large-Area Silicon Nanowire Arrays Based on Electroless Metal Deposition

2011 ◽  
Vol 194-196 ◽  
pp. 598-601
Author(s):  
Xuan Liu ◽  
Li Jie Zhao ◽  
Ping Feng
Keyword(s):  
Reaction Time ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Metal Deposition ◽  
Wire Diameter ◽  
Nanowire Arrays ◽  
Metal Particles ◽  
Large Area ◽  
Average Growth ◽  
Silicon Nanowire Arrays

Electroless metal deposition is a simple, low-cost and effective method for fabricating silicon nanowire arrays and has been used widely in micro electromechanical industry. In this paper, large-area silicon nanowire arrays are prepared successfully with mixed AgNO3and HF solution by this method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers. The length of silicon nanowires increases with the reaction time and the average growth velocity is predicted to be 0.5～0.7μm/min. The equality of silicon nanowires with nano Au particles is better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of silver ion and the removal of the oxidized silicon solution by reacting with HF.

Well incorporation of carbon nanodots with silicon nanowire arrays featuring excellent photocatalytic performances

2017 ◽  
Vol 19 (19) ◽  
pp. 11786-11792 ◽  
Author(s):  
Chia-Yun Chen ◽  
Po-Hsuan Hsiao ◽  
Ta-Cheng Wei ◽  
Ting-Chen Chen ◽  
Chien-Hsin Tang
Keyword(s):  
Silicon Nanowires ◽  
High Efficiency ◽  
Silicon Nanowire ◽  
Broad Band ◽  
Nanowire Arrays ◽  
Carbon Nanodots ◽  
Silicon Nanowire Arrays ◽  
Photocatalytic Performances ◽  
Fluorescent Carbon Nanodots ◽  
Fluorescent Carbon

Broad-band and high efficiency photocatalytic systems were demonstrated through the incorporation of silicon nanowires with highly fluorescent carbon nanodots.

scholarly journals A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array

2020 ◽  
Vol 10 (3) ◽  
pp. 1146 ◽  
Author(s):  
Kangil Kim ◽  
Jae Keun Lee ◽  
Seung Ju Han ◽  
Sangmin Lee
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Fabrication Method ◽  
Top Down ◽  
Silicon Nanowire Arrays ◽  
Sensing Applications ◽  
Silicon Nanowire Array ◽  
Cross Sectional Dimension

Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with reproducible and controllable dimensions. Indeed, for integration with microscale structures and circuits, a monolithic wafer-level process based on a top-down silicon-nanowire array fabrication method is essential. For sensors in various electromechanical and photoelectric applications, the need for silicon nanowires (as a functional building block) is increasing, and thus monolithic integration is highly required. In this paper, a novel top-down method for fabricating vertically-stacked silicon-nanowire arrays is presented. This method enables the fabrication of lateral silicon-nanowire arrays in a vertical direction, as well as the fabrication of an increased number of silicon nanowires on a finite dimension. The proposed fabrication method uses a number of processes: photolithography, deep reactive-ion etching, and wet oxidation. In applying the proposed method, a vertically-aligned silicon-nanowire array, in which a single layer consists of three vertical layers with 20 silicon nanowires, is fabricated and analyzed. The diamond-shaped cross-sectional dimension of a single silicon nanowire is approximately 300 nm in width and 20 μm in length. The developed method is expected to result in highly-sensitive, reproducible, and low-cost silicon-nanowire sensors for various biomedical applications.

Fabrication and Electrical Characterization of Silicon Nanowire Arrays

2004 ◽  
Vol 832 ◽  
Author(s):  
Sarah M. Dilts ◽  
Ahmad Mohmmad ◽  
Kok-Keong Lew ◽  
Joan M. Redwing ◽  
Suzanne E. Mohney
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Electrical Contact ◽  
Electrical Characterization ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Alumina Membranes ◽  
Boron Doped ◽  
Doped Silicon ◽  
Vls Growth

ABSTRACTHigh density boron-doped silicon nanowire arrays were fabricated within the pores of anodized alumina membranes via vapor-liquid-solid (VLS) growth Anodized alumina membranes with a nominal pore diameter of 200 nm served as templates for the sequential electrodeposition of silver, cobalt, and gold which served as the backside electrical contact, ohmic contact metal and catalyst metal for VLS growth, respectively. Boron-doped silicon nanowires were then synthesized within the pores by VLS growth using silane (SiH4) and trimethylboron (TMB) gas sources. Arrays of Al dots were deposited on the top surface of the membrane after nanowire growth. A series of samples was prepared with different SiNW lengths and boron doping levels. Two point probe measurements were used to measure the I-V characteristics of the silicon nanowire arrays before and after annealing. Nanowire resistivity and contact resistance were determined from plots of resistance versus nanowire length. The resistivity of the SiNW was observed to decrease with the addition of TMB during growth.

Mechanical, Structural and Optical Properties of the Silicon Nanowire Arrays

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Ramuvel Muthuvel ◽  
Manimaran Arunachalam ◽  
Vinayagar Karanthamalai ◽  
Ragavendran Venkatesan ◽  
Vishnukanthan Venkatachalapathy ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Optical Properties ◽  
Electrolyte Concentration ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Bulk Silicon ◽  
Structural And Optical Properties ◽  
Silicon Nanowire Arrays

AbstractThe present work discusses the systematic study of mechanical properties of the silicon nanostructures formed by metal assisted chemical etching (MACE). Silver electrolyte solution, along with hydrogen fluoride, was utilized in formation of silicon nanostructures. An optimized condition of etching time and silver electrolyte concentration were utilized to obtain high aspect ratio, defect-free and high density nanowire arrays on Si wafers. The as-prepared silicon nanostructures (SiNS) were investigated by Scanning electron microscopy (SEM) and nano indentation technique to bring out the morphological and mechanical properties. Further, the variation in optical properties of the bulk silicon and Si nanowire arrays were also investigated to determine the formation of nanostructures.

scholarly journals Characterization of Si nanowires synthesized using metal-assisted wet-chemical etching

2014 ◽  
Vol 8 (3) ◽  
Author(s):  
Eman S. M. Ashour ◽  
M.Y. Sulaiman ◽  
N. Amin ◽  
Z. Ibrahim
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Growth Parameters ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Nanowire Array ◽  
Solution Concentration ◽  
Etching Time ◽  
Si Nanowires ◽  
Potential Applications

A synthesis of vertical silicon nanowire array through metal-assisted chemical etching of highly doped p-type silicon wafers (100) in a solution of hydrofluoric acid and silver nitrate has been proposed. . The influences of the growth parameters such as solution concentration, etching time have been investigated. In addition, we consider other common parameters like wafer resistivity and temperature, which rely on the silicon nanowires formation. The results indicate that the silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer. Furthermore, They provide excellent antireflection property with a low reflection loss of 3% for incident light within the wavelength range of 200–900 nm. Such nanowire arrays may have potential applications as antireflection surface for silicon solar cells

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