Development of High-Performance Ultra-Small Size RF Chip Inductors for Wireless Communication System Application

2005 ◽  
Vol 277-279 ◽  
pp. 177-182
Author(s):  
Myung Hee Jung ◽  
Eui Jung Yun

This work investigates ultra-small size, high-performance, solenoid-type RF chip inductors for wireless communication system application. The materials (96wt% Al2O3) and shape (I-type) of the core, the diameter (40 µm) of the coil, and the length (0.35 mm) of solenoid were determined by a Maxwell three-dimensional (3D) field simulator to maximize the performance of the inductors. The dimensions of the RF chip inductors fabricated were 1.0 mm×0.5 mm×0.5 mm and copper (Cu) coils were used. The high-frequency characteristics of the inductance (L) and quality factor (Q) of the developed inductors were measured using a RF impedance/material analyzer (E4991A with an E16197A test fixture). The developed inductors with 6 coil turns exhibit an inductance of 11 to 11.3 nH, have a quality factor of 22.3 to 65.7 over the frequency ranges of 250 MHz to 1.7 GHz, and show results comparable to those measured for the inductors prepared recently by CoilcraftTm. The simulated data predicted the high-frequency data of the L and Q of the inductors developed well. It was suggested from the equivalent circuit model of the developed inductors that the developed inductors with 6 turns have a self-resonant frequency of 8 GHz.

Author(s):  
SHARMA POOJA ◽  
SHRIVASTAVA SHARAD MOHAN ◽  
MISHRA ANUJA ◽  
AGRAWAL PRACHI ◽  
PARGANIHA RAHUL ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.


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