scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

Photo-induced millimeter wave losses in coplanar waveguide on high resistivity silicon

2007 ◽  
Vol 49 (4) ◽  
pp. 808-810 ◽  
Author(s):  
G. Poesen ◽  
G. Koers ◽  
J. Stiens ◽  
G. Carchon ◽  
W. De Raedt ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Coplanar Waveguide ◽  
High Resistivity ◽  
High Resistivity Silicon

Effective resistivity extraction of low-loss silicon substrates at millimeter-wave frequencies

2020 ◽  
Vol 12 (7) ◽  
pp. 615-628
Author(s):  
Lucas Nyssens ◽  
Martin Rack ◽  
Jean-Pierre Raskin
Keyword(s):  
Millimeter Wave ◽  
Coplanar Waveguide ◽  
Characteristic Impedance ◽  
Wave Radiation ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Dielectric Losses ◽  
Effective Resistivity ◽  
Novel Method ◽  
High Resistivity Silicon

AbstractThe effective resistivity (ρeff) is a figure of merit commonly used to assess the radio-frequency performance of a substrate from the measurements of coplanar waveguide lines. For highly resistive substrates, such as the trap-rich (TR) substrate, the extracted ρeff decreases by several orders of magnitude at millimeter-wave frequencies. The explanation for this decay is twofold. First, the imaginary part of the characteristic impedance ${\rm \lpar \Im }\lpar Z_c\rpar \rpar$ is not well extracted, which leads to an incorrect separation of the total losses among the metal and substrate losses. Second, the original expression of ρeff does not include dielectric losses, which might become non-negligible at millimeter-wave frequencies. This paper solves both issues by presenting a new procedure to extract ρeff and the dielectric losses simultaneously, and by introducing a novel method to correct ${\rm \Im }\lpar {Z_c} \rpar$. Furthermore, it is shown that this extraction method enables the correct extraction of substrate parameters up to 220 GHz of TR and high-resistivity silicon substrates. Finally, the origin of the large extracted value of dielectric loss is discussed in the potential presence of surface roughness and surface wave radiation. Both phenomena are discounted thanks to measurements of an additional reflective structure and a standard impedance substrate.

A Hybrid Antenna in Package Solution Using FOWLP Technology

2021 ◽  
Author(s):  
XueSong Zhang ◽  
Qian Wang ◽  
Bo Wang ◽  
Gang Wang ◽  
Xin Gu ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Transmission Loss ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Organic Substrate ◽  
Hybrid Integration ◽  
Wafer Level ◽  
Monolithic Integrated Circuit

Abstract Widespread millimeter wave applications have promoted rapid development of System in Package (SiP) and Antenna in Package (AiP). Most AiP structures take the form of flip chip on antenna substrate, where interconnect losses are caused by solder bumps, and manufacturing difficulties may be encountered for chips with fine pad pitches. Fan-out wafer level package (FOWLP) with antenna patterning on Redistributed Layers (RDL) is another method for mm-wave AiP realization. In this project a hybrid integration AiP structure is developed. The Microwave Monolithic Integrated Circuit (MMIC) chip and antenna unit are integrated with chip-first FOWLP process. By using multilayer organic substrate and fine pitch RDL interconnection, proper antenna performance and lower transmission loss can be achieved. Modified coplanar waveguide is adopted to feed 2x2 aperture array formed on RDL. Package warpage is evaluated using ANSYS and Shadow Moire measurement. The antenna realizes bandwidth 25% and gain 8.5dBi using aperture-coupled stacked patch for 60GHz digital communication system. The proposed approach is a convenient solution for the hybrid integration of millimeter wave AiP systems.

A 34 to 36 GHz Vector Modulator for Reflected Power Canceller Techniques in LFMCW Radar

2010 ◽  
Vol 40-41 ◽  
pp. 283-286
Author(s):  
Min Zhang ◽  
Jun Xu ◽  
Xin Kai Cheng
Keyword(s):  
Theoretical Model ◽  
Theoretical Analysis ◽  
Millimeter Wave ◽  
High Performance ◽  
Continuous Wave ◽  
Low Cost ◽  
Wave Radar ◽  
Vital Component ◽  
Vector Modulator ◽  
Reflected Power

In this paper, a 34 to 36 GHz vector modulator for using in low cost and high performance RPC (Reflected Power Canceller) is presented. The key circuit consists of two push-pull (bi-phase) attenuators arranged in phase quadrature and a 3dB quadrature coupler (branch line couplers but not Lange couplers which is different from traditional circuits in Ka band) and a Wilkinson combiner, and then transition from micro-strip to waveguide using antipodal finline. To fully exploit this circuit’s capacity to generate accurate constellations at millimeter-wave frequencies, a generalized theoretical analysis of the (push-pull) vector modulator is presented. Based on the theoretical model and the measured results, the I-Q (push-pull) vector modulator promises to be a vital component for the realization of reflected power canceller in LFMCW (Linear Frequency Modulated Continuous Wave) radar.

Development of High-Performance Ultra-Small Size RF Chip Inductors for Wireless Communication System Application

2005 ◽  
Vol 277-279 ◽  
pp. 177-182
Author(s):  
Myung Hee Jung ◽  
Eui Jung Yun
Keyword(s):  
Wireless Communication ◽  
Quality Factor ◽  
System Application ◽  
Communication System ◽  
High Frequency ◽  
High Performance ◽  
Three Dimensional ◽  
Equivalent Circuit Model ◽  
Simulated Data ◽  
Wireless Communication System

This work investigates ultra-small size, high-performance, solenoid-type RF chip inductors for wireless communication system application. The materials (96wt% Al2O3) and shape (I-type) of the core, the diameter (40 µm) of the coil, and the length (0.35 mm) of solenoid were determined by a Maxwell three-dimensional (3D) field simulator to maximize the performance of the inductors. The dimensions of the RF chip inductors fabricated were 1.0 mm×0.5 mm×0.5 mm and copper (Cu) coils were used. The high-frequency characteristics of the inductance (L) and quality factor (Q) of the developed inductors were measured using a RF impedance/material analyzer (E4991A with an E16197A test fixture). The developed inductors with 6 coil turns exhibit an inductance of 11 to 11.3 nH, have a quality factor of 22.3 to 65.7 over the frequency ranges of 250 MHz to 1.7 GHz, and show results comparable to those measured for the inductors prepared recently by CoilcraftTm. The simulated data predicted the high-frequency data of the L and Q of the inductors developed well. It was suggested from the equivalent circuit model of the developed inductors that the developed inductors with 6 turns have a self-resonant frequency of 8 GHz.

scholarly journals High performance terahertz quantum cascade lasers

2020 ◽  
Vol 13 (2) ◽  
pp. 61-72
Author(s):  
Y.Y. Li ◽  
J. Q. Liu ◽  
F.Q. Liu ◽  
Z. G. Wang
Keyword(s):  
High Frequency ◽  
High Performance ◽  
Quantum Cascade Lasers ◽  
Rapid Development ◽  
Quantum Cascade ◽  
Terahertz Region ◽  
Great Progress ◽  
Electromagnetic Gap ◽  
Application Requirements ◽  
Cascade Lasers

Terahertz region is the electromagnetic gap between the infrared optoelectronics and the high frequency electronics, which is of broad prospects in applications. The application requirements drive the rapid development in Terahertz technologies including sources, detectors and systems. In the last two decades, quantum cascade laser has made great progress as one of the most promising terahertz sources. In this paper, we present the development of terahertz quantum cascade lasers in our group.

A New Compact Coplanar Waveguide Stop Band Filter Based on Circular Shaped DGS for Microwave and Millimeters Wave Applications

2020 ◽  
pp. 191-213
Author(s):  
Elmahjouby Sghir ◽  
Ahmed Errkik ◽  
Mohamed Latrach
Keyword(s):  
Millimeter Wave ◽  
Coplanar Waveguide ◽  
Stop Band ◽  
Equivalent Circuit Model ◽  
Defected Ground Structure ◽  
Coplanar Line ◽  
Band Filter ◽  
Microwave Components ◽  
Conductor Line ◽  
Coplanar Technology

This chapter introduces an overview of coplanar technology and the general techniques and process to improve the response and characteristics of microwave components. A new circular defected ground structure (DGS) with shaped coplanar line is investigated for compact stopband filter (SBF) for microwave and millimeter wave applications. With this structure, the response of resonant element in 20 GHz exhibits the bandstop function. The proposed DGS is also modified by introducing four symmetrical slots with L-configuration in conductor line of a coplanar circuit to improve separately the stopband and passband performances. An equivalent circuit model derived for the proposed structures will be provided.

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